US3610202A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitactic apparatus
Assignee: Siemens AG
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Filing: 1969-05-23
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Granted: 1971-10-05
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Expires: 1989-05-23
Abstract
Abstract Apparatus for epitactic precipitation of semiconductor wafers. The apparatus comprises a reaction chamber with the disc to be processed arranged on the bottom of said reaction chamber. A gas inlet and outlet are arranged concentrically in the top of said reaction chamber. The wafers are heated to processing temperature by an electric heating device located beneath the bottom of the reaction chamber. This device extends areally to the upper surface parallel to the disc to be treated. A sleeve encloses the electric heating device and the lower portion of the reaction chamber and structurally connects the electric heating device with the reaction chamber.
Inventors
- 👤 Erhard Sussmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:44
CPC Classifications
C; C23; C23C; C23C16/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
168 words
Apparatus for epitactic precipitation of semiconductors, upon heated semiconductor wafers by an appropriate reaction gas, said apparatus comprising a cylindrical reaction chamber on whose bottom the wafers to be coated are received, an inlet pipe for supplying fresh reaction gas from above extending into the reaction chamber, a gas outlet concentrically arranged with said gas outlet at the top of the reaction chamber, seated beneath said reaction chamber is an electrical heater which extends areally parallel to the bottom of said reaction chamber and heats the semiconductor wafers, a temperature compensation plate is disposed between said heater and said bottom to equalize the heating of the wafers when in operation, at least the bottom of said reaction chamber is of a material selected from the group consisting of quartz, BeO and SiC, said electrical heater and temperature-compensating plate being disposed within a cup-shaped sleeve which encompasses, in spaced-apart relationship, substantially the bottom half of said reaction chamber and is sealed at its top edge to the reaction chamber.
Claim 2
Dependent Claim
168 words
Apparatus for epitactic precipitation of semiconductors, upon heated semiconductor wafers by an appropriate reaction gas, said apparatus comprising a cylindrical reaction chamber on whose bottom the wafers to be coated are received, an inlet pipe for supplying fresh reaction gas from above extending into the reaction chamber, a gas outlet concentrically arranged with said gas outlet at the top of the reaction chamber, seated beneath said reaction chamber is an electrical heater which extends areally parallel to the bottom of said reaction chamber and heats the semiconductor wafers, a temperature compensation plate is disposed between said heater and said bottom to equalize the heating of the wafers when in operation, at least the bottom of said reaction chamber is of a material selected from the group consisting of quartz, BeO and SiC, said electrical heater and temperature-compensating plate being disposed within a cup-shaped sleeve which encompasses, in spaced-apart relationship, substantially the bottom half of said reaction chamber and is sealed at its top edge to the reaction chamber.
Claim 3
Dependent Claim
47 words
Apparatus according to claim 1, wherein the reaction chamber consists of an upper portion equipped with said gas inlet and said gas outlet and a lower, cup-shaped portion which receives the semiconductor wafers to be coated, the two portions connectable to each other, in a gastight manner.
Claim 4
Dependent Claim
24 words
Apparatus according to claim 2, wherein the lower and the upper portions of the precipitation device are fitted to each other by polished surfaces.
Claim 5
Dependent Claim
23 words
Apparatus according to claim 2, wherein the marginal decline of the temperature of the heater in compensated by appropriate tapering of the heater.
Claim 6
Dependent Claim
33 words
Apparatus according to claim 4, wherein the connection between said sleeve containing the heater and equipped with gastight walls and the bottom portion of the reaction vessel, may be separated and is gastight.
Claim 7
Dependent Claim
14 words
Apparatus according to claim 5 wherein the sleeve is provided with a cooling device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-04 | 1975-04-05 | 1975-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-04 | 1979-04-05 | 1979-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-04 | 1983-04-05 | 1983-10-05 | $7700.00 | Window Closed / Lapsed |