Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
111 words
In combination, A. A standard for calibrating a multiple point probe comprising: 1. a plurality of electrically isolated semiconductor areas each adapted to be contracted by one of the points of the probe, and 2. a resistor of known resistance value made of electrically stable material electrically connected between two of the isolated areas, B. two points of the multiple point probe to be calibrated each connected to one of the two isolated areas between which the resistor is connected, C. means for supplying a constant current through said resistor connected to the two points of the multiple point probe, and D. means for measuring a resultant voltage across the resistor.
Claim 2
Dependent Claim
111 words
In combination, A. A standard for calibrating a multiple point probe comprising: 1. a plurality of electrically isolated semiconductor areas each adapted to be contracted by one of the points of the probe, and 2. a resistor of known resistance value made of electrically stable material electrically connected between two of the isolated areas, B. two points of the multiple point probe to be calibrated each connected to one of the two isolated areas between which the resistor is connected, C. means for supplying a constant current through said resistor connected to the two points of the multiple point probe, and D. means for measuring a resultant voltage across the resistor.
Claim 3
Dependent Claim
25 words
four discrete areas in the substrate of opposite conductivity type each adapted to be contracted by one of the four points of the probe, and
Claim 4
Dependent Claim
25 words
four discrete areas in the substrate of opposite conductivity type each adapted to be contracted by one of the four points of the probe, and
Claim 5
Dependent Claim
38 words
The combination of claim 1 additionally comprising: E. means operatively engageable to alter the relative position of the areas and the probe points to position a previously uncontacted place in each of the areas beneath the probe points.
Claim 6
Dependent Claim
76 words
a resistor of known resistance value made of electrically stable material electrically connected between two of the isolated areas, B. two points of the multiple point probe to be calibrated each connected to one of the two isolated areas between which the resistor is connected, C. means for supplying a constant current through said resistor connected to the two points of the multiple point probe, and D. means for measuring a resultant voltage across the resistor.
Claim 7
Dependent Claim
76 words
a resistor of known resistance value made of electrically stable material electrically connected between two of the isolated areas, B. two points of the multiple point probe to be calibrated each connected to one of the two isolated areas between which the resistor is connected, C. means for supplying a constant current through said resistor connected to the two points of the multiple point probe, and D. means for measuring a resultant voltage across the resistor.
Claim 8
Dependent Claim
132 words
a resistor of known value contained within a metal pattern on an insulated surface of the semiconductor substrate and electrically connected to the four areas to allow two circuit paths to be completed, each through two of the areas with the resistor between the two of the areas in each circuit, B. two points of the four point probe connected to two of the areas to complete one of the circuit paths, C. a constant current source connected to said two points of the four-point probe, D. the other two points of the four-point probe connected to the other two areas to complete the other of the two circuit paths, and E. means for measuring a resultant voltage drop across the resistor connected to said other two points of the four-point probe.
Claim 9
Dependent Claim
132 words
a resistor of known value contained within a metal pattern on an insulated surface of the semiconductor substrate and electrically connected to the four areas to allow two circuit paths to be completed, each through two of the areas with the resistor between the two of the areas in each circuit, B. two points of the four point probe connected to two of the areas to complete one of the circuit paths, C. a constant current source connected to said two points of the four-point probe, D. the other two points of the four-point probe connected to the other two areas to complete the other of the two circuit paths, and E. means for measuring a resultant voltage drop across the resistor connected to said other two points of the four-point probe.
Claim 10
Dependent Claim
49 words
The combination of claim 1 in which the probe is a four-point probe, there are four electrically isolated areas of semiconductor material adapted to be contacted by the four probe points, and the resistor is of a value within the range of resistances to be measured by the probe.
Claim 11
Dependent Claim
11 words
In combination, A. A standard for calibrating a four-point probe comprising:
Claim 12
Dependent Claim
11 words
In combination, A. A standard for calibrating a four-point probe comprising:
Claim 13
Dependent Claim
30 words
drive means operatively connected to the standard for positioning a previously unconnected portion of the four areas beneath the four points of the probe each time the standard is used.
Claim 14
Dependent Claim
30 words
drive means operatively connected to the standard for positioning a previously unconnected portion of the four areas beneath the four points of the probe each time the standard is used.
Claim 15
Dependent Claim
20 words
The combination of claim 4 in which the semiconductor substrate is p-type silicon and the four areas are n-type silicon.
Claim 16
Dependent Claim
20 words
The combination of claim 4 in which the semiconductor substrate is n-type silicon and the four areas are p-type silicon.
Claim 17
Dependent Claim
11 words
The combination of claim 4 in which the standard additionally comprises:
Claim 18
Dependent Claim
20 words
The combination of claim 7 in which the semiconductor substrate is p-type silicon and the four areas are n-type silicon.
Claim 19
Dependent Claim
20 words
The combination of claim 7 in which the semiconductor substrate is n-type silicon and the four areas are p-type silicon.
Claim 20
Independent Claim
132 words
A method for calibrating a multiple point probe of the type used to measure resistances within a given range of values in a semiconductor comprising: a. electrically connecting a metallic resistor having a value within the range between two electrically isolated areas of semiconductor material, b. contacting each of the two isolated areas of semiconductor material with one of the points of the probe in a previously uncontacted portion of each area, c. passing a known constant current between the points of the probe contacting the two isolated areas through the resistor, d. obtaining a reading of the voltage drop across the resistor with the probe, and e. adjusting the reading of the voltage drop to correspond to the value which should be obtained across the known resistor with the known current.
Claim 21
Independent Claim
132 words
A method for calibrating a multiple point probe of the type used to measure resistances within a given range of values in a semiconductor comprising: a. electrically connecting a metallic resistor having a value within the range between two electrically isolated areas of semiconductor material, b. contacting each of the two isolated areas of semiconductor material with one of the points of the probe in a previously uncontacted portion of each area, c. passing a known constant current between the points of the probe contacting the two isolated areas through the resistor, d. obtaining a reading of the voltage drop across the resistor with the probe, and e. adjusting the reading of the voltage drop to correspond to the value which should be obtained across the known resistor with the known current.
Claim 22
Dependent Claim
50 words
The method of claim 10 in which the multiple point probe is a four-point probe, there are four electrically isolated areas of semiconductor material, the constant current is passed through two of the probe points, and the voltage drop across the resistor is measured between the other two probe points.