Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
24 words
spaced different distances from said metallic plate, so as to provide broadband compensation for the input and output inductances and/or capacitances of said device.
Claim 2
Dependent Claim
21 words
The semiconductor device defined in claim 1, further comprising an insulating plate disposed between said semiconductor element and said metallic plate.
Claim 3
Dependent Claim
17 words
The semiconductor device defined in claim 2, wherein said semiconductor element includes at least one planar transistor.
Claim 4
Dependent Claim
59 words
The semiconductor device defined in claim 3, wherein said at least one transistor has an emitter, a base and a collector, and wherein said emitter is connected to said metallic plate by a metal coating extending over the surface of said insulating plate, and said base and said collector are electrically connected to respective ones of said strip-shaped conductors.
Claim 5
Dependent Claim
19 words
The semiconductor device defined in claim 4, wherein the base-connected strip-shaped conductor is wider than the collector-connected strip-shaped conductor.
Claim 6
Dependent Claim
25 words
The semiconductor device in claim 4, wherein the base-connected strip-shaped conductor is spaced a lesser distance from said metallic plate than said collector-connected strip-shaped conductor.
Claim 7
Dependent Claim
160 words
The semiconductor device defined in claim 2, further comprising three separated metallized regions serially arranged, one next to the other, on the surface of said insulating plate which faces away from said metallic plate, the central one of said three regions being electrically connected with said metallic plate by at least one further metallized region extending along at least one side surface of said insulating plate between said central region and said metallic plate, wherein the two outer ones of said three metallized regions are connected to respective ones of said strip-shaped conductors, wherein said semiconductor element includes at least one transistor having a base, an emitter and a collector, wherein the collector of said at least one transistor is in ohmic contact with one of said two outer regions, and wherein the other of said two outer regions and said central region are each electrically connected to one of said base and emitter by means of thin lead wires.
Claim 8
Dependent Claim
47 words
The semiconductor device defined in claim 7, wherein said insulating plate has different thicknesses at said two outer regions, thereby to cause said two strip-shaped conductors, which are each respectively connected to one of said two outer regions, to be spaced different distances from said metallic plate.
Claim 9
Dependent Claim
15 words
The semiconductor device defined in claim 2, wherein said insulating plate is made of ceramic.
Claim 10
Dependent Claim
44 words
The semiconductor device defined in claim 2, wherein said insulating plate, said semiconductor element, and the electrical connections between said semiconductor element and said two strip-shaped conductors are embedded in a mass of material selected from the group consisting of plastic, glass and ceramic.
Claim 11
Dependent Claim
15 words
The semiconductor device defined in claim 1, wherein said metallic plate consists of silver-plated molybdenum.
Claim 12
Dependent Claim
54 words
The semiconductor device defined in claim 1, wherein said semiconductor element is a 10 watt high-frequency transistor, and wherein one of said strip-shaped conductors is connected to the base of said transistor, said one conductor having a width of approximately 10 mm. and being spaced a distance of 0.5 mm. from said metallic plate.
Claim 13
Dependent Claim
63 words
The semiconductor device defined in claim 1, wherein said semiconductor element includes at least one high-frequency transistor, and wherein one of said strip-shaped conductors is connected to the base of said at least one transistor, said one conductor having a width which is proportional, and being spaced a distance which is inversely proportional to the rated power of Said at least one transistor.
Claim 14
Dependent Claim
67 words
The semiconductor device defined in claim 7, further comprising a metallic elevation disposed between said other of said two outer regions and the ones of said thin lead wires, which connect said other outer region to one of said base and emitter, thereby to separate said ones of said thin lead wires from those of said thin lead wires which are electrically connected to said central region.