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US3609478A Expired / Lapsed US ⏱️ 0.0 years remaining

Buried-layer semiconductor device for detecting and measuring the energy and atomic number of impinging atomic particles

Assignee: Ion Physics Corp
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Filing: 1967-10-16
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Granted: 1971-09-28
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Expires: 1987-10-16
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Abstract

Abstract The present invention relates to radiation detection devices and more particularly to a solid-state device capable of detecting and measuring the energy and atomic number of impinging particles. This device contains a region imbedded completely within its body which is opposite conductivity type than the body and which is separated from the body by two distinct PN junctions. The imbedded region is produced by ion implantation and differs from such regions produced by other means in that the percentage compensation of dopant impurities between the region and all points on the surface of the body may be small, that is, 1 percent or less.

Inventors

  • 👤 William J King
  • 👤 Frederick W Martin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 04:20
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/292; H10F99/00

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-09-27 1975-03-29 1975-09-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-09-27 1979-03-29 1979-09-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-09-27 1983-03-29 1983-09-28 $7700.00 Window Closed / Lapsed

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