US3603847A
Expired / Lapsed
US
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Schottky barrier photodiode with a degenerate semiconductor active region
Assignee: United States Department of the Air Force
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Filing: 1969-06-11
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Granted: 1971-09-07
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Expires: 1989-06-11
Abstract
Abstract A Schottky barrier photodiode possessing a high quantum efficiency and adapted to operate at long wavelengths. The photodiode is fabricated by providing a nondegenerate semiconductor substrate of one extrinsic conductivity type with a thin layer of a degenerate semiconductor material of the same extrinsic conductivity type as said substrate to form a barrier junction therebetween. The improved quantum efficiency exhibited by the photodiode of this invention is attributed to the use of a degenerate material as the active region.
Inventors
- 👤 Freeman D Shepherd Jr
- 👤 Virgil E Vickers
- 👤 Andrew C Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:35
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F99/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3424890A
Cited
US3530011A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-06 | 1975-03-08 | 1975-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-06 | 1979-03-08 | 1979-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-06 | 1983-03-08 | 1983-09-07 | $7700.00 | Window Closed / Lapsed |