US3603818A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gunn-diode logic circuits
Assignee: AT&T Inc
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Filing: 1969-06-17
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Granted: 1971-09-07
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Expires: 1989-06-17
Abstract
Abstract Two Gunn diodes are connected in series between oppositely poled bias sources. The sources are selected such that in the absence of high-field domains in the diodes the internal field in each diode is just above the threshold for domain propagation. When a high-field domain propagates in one diode, the internal field available in the other device is below the minimum value required to achieve domain nucleation. By applying a bias current to an input-output node point between the diodes, it is possible thereby to selectively give preference to domain nucleation in either diode. This basic two-diode arrangement is utilized to form a threshold detector, a bistable circuit, a pulse regenerator and an analog-to-digital converter.
Inventors
- 👤 Gerard White
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:39
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/313; H03K5/00; H03K5/01; H03K5/08
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
106 words
In combination, two Gunn-effect diodes connected in series, means for respectively applying oppositely poled bias voltages to said diodes for enabling one or the other of said diodes to oscillate, said voltages being of a magnitude such that in the absence of high-field domains in the diodes the internal field in each diode is above the threshold for domain nucleation and propagation and in the presence of a high-field domain in one diode the internal field available in the other diode is below the minimum value required to support domain nucleation, and means connected to a pOint between said diodes for controlling the oscillatory condition thereof.
Claim 2
Dependent Claim
106 words
In combination, two Gunn-effect diodes connected in series, means for respectively applying oppositely poled bias voltages to said diodes for enabling one or the other of said diodes to oscillate, said voltages being of a magnitude such that in the absence of high-field domains in the diodes the internal field in each diode is above the threshold for domain nucleation and propagation and in the presence of a high-field domain in one diode the internal field available in the other diode is below the minimum value required to support domain nucleation, and means connected to a pOint between said diodes for controlling the oscillatory condition thereof.
Claim 3
Dependent Claim
15 words
A combination as in claim 1 further including output utilization means connected to said point.
Claim 4
Dependent Claim
30 words
A combination as in claim 2 still further including a memory element connected to said point for maintaining said diodes in the oscillatory condition last established by said controlling means.
Claim 5
Dependent Claim
126 words
In combination, an arrangement comprising two Gunn-diodes connected in series and having a node point defined therebetween, each of said diodes being adapted to have a high-field domain nucleated therein and propagated therethrough, means connected to the respective ends of said arrangement for applying oppositely poled bias voltages thereto of a magnitude such that in the absence of high-field domains in the diodes the internal field in each diode is above the threshold for domain nucleation and propagation and in the presence of a high-field domain in one diode the internal field available in the other diode is below the minimum value required to support domain nucleation, and means connected to said node point for controlling which one of said diodes is to propagate a domain.
Claim 6
Dependent Claim
126 words
In combination, an arrangement comprising two Gunn-diodes connected in series and having a node point defined therebetween, each of said diodes being adapted to have a high-field domain nucleated therein and propagated therethrough, means connected to the respective ends of said arrangement for applying oppositely poled bias voltages thereto of a magnitude such that in the absence of high-field domains in the diodes the internal field in each diode is above the threshold for domain nucleation and propagation and in the presence of a high-field domain in one diode the internal field available in the other diode is below the minimum value required to support domain nucleation, and means connected to said node point for controlling which one of said diodes is to propagate a domain.
Claim 7
Dependent Claim
15 words
A combination as in claim 4 further including output means connected to said node point.
Claim 8
Dependent Claim
30 words
A combination as in claim 5 further including a memory element connected to said node point for maintaining said diodes in the domain-propagating condition last established by said controlling means.
Claim 9
Dependent Claim
67 words
A combination as in claim 5 wherein said controlling means is adapted quiescently to supply a constant input signal of one polarity to said node point thereby to select one of said diodes for domain propagation therein and is adapted intermittently to supply a pulse-type signal of the other polarity to said node point thereby to select the other one of said diodes for domain propagation therein.
Claim 10
Dependent Claim
81 words
A combination as in claim 5 wherein said controlling means is adapted to supply an input signal characterized by a threshold level which is to be detected, and wherein said controlling means includes variable means for supplying a threshold setting input signal to said node point whereby one diode of said combination propagates domains when the input signal is below said threshold level and the other diode of said combination propagates domains when the input signal is above said threshold level.
Claim 11
Dependent Claim
31 words
A combination as in claim 5 wherein said controlling means includes means for supplying to said node point an input analog signal to be encoded and an input encoding function signal.
References Cited (Backward Citations)
US3493842A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-06 | 1975-03-08 | 1975-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-06 | 1979-03-08 | 1979-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-06 | 1983-03-08 | 1983-09-07 | $7700.00 | Window Closed / Lapsed |