Abstract This disclosure is to a process for making semiconductor devices having refractory dielectrics as diffusant masks and interconnection insulations and the resulting structures. The refractory dielectric is deposited onto a semiconductor wafer and an aperture is created that extends through the dielectric to the wafer. An impurity is then diffused into the wafer at the aperture''s location and a semiconductor junction is created. In this manner one embodiment of the disclosed structure is formed. If desired, further junctions can be created by applying a second deposition of the refractory dielectric and then performing further aperture creating and impurity diffusing operations. Alternatively, a thermally-grown dielectric can be grown in the first aperture and a second aperture can be created through the thermally-grown dielectric. A further impurity is then diffused into the wafer at the second aperture''s location.
The method of claim 1 wherein said second and third thermally grown layers are silicon dioxide.
Claim 2
Independent Claim
174 words
A method of making transistor semiconductor devices comprising the steps of: depositing a first layer of a refractory dielectric onto the surface of a wafer of semiconductor material of a given conductivity type; creating a first aperture in said first dielectric layer; diffusing a first type of impurity through said first aperture to form a base region; depositing a second layer of a refractory dielectric onto said first dielectric layer; creating a second and a third aperture in said second layer, said second aperture exposing a portion of said region of opposite conductivity and said third aperture extending only to said first refractory dielectric layer; diffusing a second type of impurity through said second aperture to form an emitter region; creating a fourth and a fifth aperture, said fourth aperture extending through said third aperture to form an exposed portion of a collector region and said fifth aperture extending through said second dielectric layer to form an exposed portion of said base region; and forming ohmic contacts through said second, fourth and fifth apertures.
Claim 3
Dependent Claim
22 words
A method as claimed in claim 3 wherein said wafer has N-type conductivity and said first impurity is a compound of gallium.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 3 wherein said wafer is a compound of gallium.
Claim 5
Dependent Claim
14 words
A method as claimed in claim 5 wherein said gallium compound is gallium arsenide.
Claim 6
Dependent Claim
14 words
A method as claimed in claim 5 wherein said gallium compound is gallium phosphide.
Claim 7
Dependent Claim
15 words
A method as claimed in claim 3 wherein said refractory dielectric layers are silicon nitride.
Claim 8
Dependent Claim
15 words
A method as claimed in claim 3 wherein said refractory dielectric layers are aluminum oxide.