High frequency bulk semiconductor amplifiers and oscillators

Abstract

Abstract Stable high frequency oscillating and amplifying devices are prepared from bulk semiconductor materials which have a positive differential conductivity at relatively low frequencies and a negative differential conductivity in some ranges of relatively high frequencies. The materials used are further characterized in that there is charge carrier transfer or population redistribution from a lower mobility band or low mobility impurity level to a higher mobility band, an effect opposite to that of Gunn effect devices. Materials suitable for the devices of this invention may be selected from a representative group of suitably doped III-V compounds, for example, N-type InSb, N-type alloys of the form InxGa1 xAs, where 0.53<x<1.0, InAsxP1 x, where 0.30<x<1.0, InxA11 xSb where 0.9<x 1.0, stressed N-type germanium, or stressed P-type germanium and silicon.

Inventors

• 👤 James C Mcgroddy

Bibliographic Details