US3602780A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radial high frequency power transistor employing peripheral emitter contact ring and high current base contact layer
Assignee: RCA Corp
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Filing: 1970-02-20
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Granted: 1971-08-31
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Expires: 1990-02-20
Abstract
Abstract A transistor which includes a collector region having a hub extending to the surface, and an annular base region disposed adjacent to the collector and about the hub, with portions of the base extending to the surface and forming a plurality of radial lobes around the hub. An emitter region is disposed in the base, and comprises a ring about the ends of the base lobes, and wedgeshaped portions between adjacent base lobes. In an alternate embodiment, the annular emitter ring is omitted.
Inventors
- 👤 David Stanley Jacobson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:17
CPC Classifications
H; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
190 words
A semiconductor device comprising: a crystalline semiconductor body with a major surface having a central portion thereon; a collector region within the body having a hub extending to the surface and including the central portion; an annular base region disposed adjacent the collector region and around the hub, portions of the base region extending to the surface and forming a plurality of radial lobes around the hub, each lobe having a shallow, high conductivity region therein of the same conductivity type; an emitter region comprising a ring encircling the ends of the base lobes, and wedge-shaped portions extending from the ring toward the hub and between adjacent base lobes; an insulating coating on the surface having an aperture exposing the emitter ring, said coating also having a plurality of slots, with each slot exposing one of said base lobes; a metal emitter contact layer making ohmic contact only to the emitter ring; and a circular base metal layer of uniform radius disposed on the coating and extending to the ends of said lobes, said base layer contacting each shallow, high conductivity region of all of said lobes through the slots.
Claim 2
Dependent Claim
190 words
A semiconductor device comprising: a crystalline semiconductor body with a major surface having a central portion thereon; a collector region within the body having a hub extending to the surface and including the central portion; an annular base region disposed adjacent the collector region and around the hub, portions of the base region extending to the surface and forming a plurality of radial lobes around the hub, each lobe having a shallow, high conductivity region therein of the same conductivity type; an emitter region comprising a ring encircling the ends of the base lobes, and wedge-shaped portions extending from the ring toward the hub and between adjacent base lobes; an insulating coating on the surface having an aperture exposing the emitter ring, said coating also having a plurality of slots, with each slot exposing one of said base lobes; a metal emitter contact layer making ohmic contact only to the emitter ring; and a circular base metal layer of uniform radius disposed on the coating and extending to the ends of said lobes, said base layer contacting each shallow, high conductivity region of all of said lobes through the slots.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-30 | 1975-03-01 | 1975-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-30 | 1979-03-01 | 1979-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-30 | 1983-03-01 | 1983-08-31 | $7700.00 | Window Closed / Lapsed |