US3601713A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Shaped bulk negative-resistance device oscillators and amplifiers
Assignee: RTX Corp
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Filing: 1969-02-06
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Granted: 1971-08-24
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Expires: 1989-02-06
Abstract
Abstract A class of active solid state oscillators and amplifiers in which an active working substance, typically a semiconductor such as gallium arsenide, is connected between two low-resistance contacts. The working substance is shaped or sculptured in a manner to alter the electric field distribution in the working substance and to maintain the active region of the device away from the controlling electric fields of the contacts.
Inventors
- 👤 Peter R Solomon
- 👤 Melvin P Shaw
- 👤 Harold L Grubin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:34
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H10; H10N; H10N80/00; H10N80/10; H10N80/107
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
173 words
In a semiconductor device which includes an N-type two-valley semiconductor material capable of exhibiting bulk negative differential resistance, anode and cathode contacts connected to different portions of said material, said contacts being of low resistance and being separated by an active region of said material, a load circuit connected with said material, and means for applying a bias voltage between said contacts of a magnitude sufficient to generate an electric field above a threshold value at which said material begins to exhibit differential negative resistance, the improvement which comprises means for maintaining the electric field at the cathode boundary of the active region of said material at a magnitude which is below said threshold value while the electric field in the active region of said material is above said threshold value whereby no current oscillations are produced in said material when said load circuit is resistive, and whereby circuit controlled current oscillations are produced in said material at a frequency determined by the load circuit when said load circuit is a resonant circuit.
Claim 2
Dependent Claim
173 words
In a semiconductor device which includes an N-type two-valley semiconductor material capable of exhibiting bulk negative differential resistance, anode and cathode contacts connected to different portions of said material, said contacts being of low resistance and being separated by an active region of said material, a load circuit connected with said material, and means for applying a bias voltage between said contacts of a magnitude sufficient to generate an electric field above a threshold value at which said material begins to exhibit differential negative resistance, the improvement which comprises means for maintaining the electric field at the cathode boundary of the active region of said material at a magnitude which is below said threshold value while the electric field in the active region of said material is above said threshold value whereby no current oscillations are produced in said material when said load circuit is resistive, and whereby circuit controlled current oscillations are produced in said material at a frequency determined by the load circuit when said load circuit is a resonant circuit.
Claim 3
Dependent Claim
46 words
A semiconductor device as in claim 1 in which the active region of said semiconductor material is physically separated from the said cathode contact by a nonactive region of said semiconductor material having a larger cross-sectional area than the cross-sectional area of the said active region.
Claim 4
Dependent Claim
14 words
A semiconductor device as in claim 1 in which said semiconductor material is GaAs.
Claim 5
Dependent Claim
22 words
A semiconductor device as in claim 1 in which at least one of said contacts has a linear current versus voltage characteristic.
Claim 6
Dependent Claim
21 words
A semiconductor device as in claim 1 in which at least one of said contacts has nonlinear current versus voltage characteristics.
Claim 7
Dependent Claim
15 words
A semiconductor device as in claim 30 in which said nonlinear contact is a diode.
Claim 8
Dependent Claim
22 words
A semiconductor device as in claim 1 in which said active region has a substantially constant cross-sectional area along the length thereof.
Claim 9
Dependent Claim
22 words
A semiconductor device as in claim 2 in which said anode contact is applied to the active region of said semiconductor material.
Claim 10
Dependent Claim
32 words
A semiconductor device as in claim 8 in which said active region has a cross-sectional area which decreases substantially linearly from the nonactive region of said semiconductor material toward said anode contact.
Claim 11
Dependent Claim
35 words
A semiconductor device as in claim 8 in which said active region has a cross-sectional area which varies in a predetermined geometrical pattern between the nonactive region of said semiconductor material and said anode contact.
Claim 12
Dependent Claim
45 words
A semiconductor device as in claim 2 in which the active region of said semiconductor material physically separated from the said anode contact by a nonactive region of said semiconductor material having a larger cross-sectional area than the cross-sectional area of the said active region.
Claim 13
Dependent Claim
20 words
A semiconductor device as in claim 1 in which said semiconductor material consists of an epilayer formed upon a substrate.
Claim 14
Dependent Claim
16 words
A semiconductor device as in claim 12 in which said contacts are connected to said epilayer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-23 | 1975-02-22 | 1975-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-23 | 1979-02-22 | 1979-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-23 | 1983-02-22 | 1983-08-24 | $7700.00 | Window Closed / Lapsed |