US3600646A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power transistor
Assignee: RCA Corp
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Filing: 1969-12-18
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Granted: 1971-08-17
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Expires: 1989-12-18
Abstract
Abstract A transistor with interdigitated emitter and base fingers, in which the emitter has a web portion for feeding current to the fingers, and metal layers on both the web and the fingers. The emitter finger metal layers are spaced from the web portion metal layers to introduce a ballasting resistance, with that portion of each finger metal layer proximate to the web portion being substantially wider than the remainder of the finger layer, and interspersed between the corresponding base finger and the emitter web portion to maintain a uniform distance between the base finger and the emitter finger metal layer.
Inventors
- 👤 Norbert William Brackelmanns
- 👤 Joel Ollendorf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:00
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D84/125; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10P; H10P95/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
214 words
A transistor comprising: a. a semiconductor having a surface; b. a first conductivity type collector region in the body; c. a second conductivity type base region in the body adjacent the collector region with a base-collector junction therebetween, a portion of the base region extending to he surface; d. an emitter region extending into the base region from the surface, with an emitter-base junction therebetween; e. the emitter region comprising a central web portion and fingers extending outwardly from the web portion; f. a metal web contact layer covering part of the emitter web portion; g. the base region including base fingers interdigitated with the emitter fingers; h. a metal contact layer on each emitter finger, each contact layer having a proximal portion adjacent to, but separated from, the emitter web contact finger so as to introduce a ballasting resistance therebetween; and i. means for providing a substantially uniform resistance between the metal web contact layer and each of the base fingers, the means comprising the proximal portion of each emitter finger contact layer being substantially wider than the remainder of the layer, so that the proximal portion is interspersed between the corresponding base finger and the web portion to maintain a uniform distance between the base finger and the emitter finger contact layer.
Claim 2
Dependent Claim
214 words
A transistor comprising: a. a semiconductor having a surface; b. a first conductivity type collector region in the body; c. a second conductivity type base region in the body adjacent the collector region with a base-collector junction therebetween, a portion of the base region extending to he surface; d. an emitter region extending into the base region from the surface, with an emitter-base junction therebetween; e. the emitter region comprising a central web portion and fingers extending outwardly from the web portion; f. a metal web contact layer covering part of the emitter web portion; g. the base region including base fingers interdigitated with the emitter fingers; h. a metal contact layer on each emitter finger, each contact layer having a proximal portion adjacent to, but separated from, the emitter web contact finger so as to introduce a ballasting resistance therebetween; and i. means for providing a substantially uniform resistance between the metal web contact layer and each of the base fingers, the means comprising the proximal portion of each emitter finger contact layer being substantially wider than the remainder of the layer, so that the proximal portion is interspersed between the corresponding base finger and the web portion to maintain a uniform distance between the base finger and the emitter finger contact layer.
Claim 3
Dependent Claim
21 words
A transistor in accordance with claim 1, wherein the proximal portion of the emitter finger layer is substantially triangular in shape.
Claim 4
Dependent Claim
41 words
A transistor in accordance with claim 1, wherein the uniform distance between the base finger and the emitter finger layer is greater than the ballast resistance spacing between the proximal portion of the finger layer and the web portion metal layer.
References Cited (Backward Citations)
US3358197A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-16 | 1975-02-15 | 1975-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-16 | 1979-02-15 | 1979-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-16 | 1983-02-15 | 1983-08-17 | $7700.00 | Window Closed / Lapsed |