Method of using and for fabricating lutrasonic bonding grade aluminum wire and resulting product

Abstract

Abstract IN ACCORDANCE WITH THE INVENTION THERE IS PROVIDED A METHOD WHICH PERMITS ULTRASONICALLY BONDING SILICON ALUMINUM WIRE TO TRANSISTORS WITH IMPROVED EFFECTIVENESS BY PREPARING THE SILICON ALUMINUM WIRE WITH A SILICON CONTENT OF ABOUT 1% WITH AN IMPROVED METHOD, THE METHOD MORE PLARTICULARLY COMPRISING HOMOGENIZING A SILICON ALUMINUM MATERIAL AT AN ELEVATED TEMPERATURE, FOLLOWED BY A QUENCHING OF THE METAL. THERE MAY BE A SUBSEQUENT FORMING OF A WIRE FROM THE METAL OR THE WIRE MAY BE PREVIOUSLY FORMED IN PART OR IN ENTIRETY. PREFERABLY, IF THE ORIGINAL INGOT IS HOMOGENIZED, IT WILL HAVE A DIAMETER OF 1-2 INCHES. THE INGOT WILL HAVE PREFERRED SILICON CONTENT RANGE OF 0.50-1.50% AND THE HOMOGENIZING IS EFFECTED PREFERABLY AT A TEMPERATURE OF ABOUT 1050 DEG. F. FOR A PERIOD OF 1 TO 24 HOURS AFTER EQSUILIBRIUM IS EFFECTED. QUENCHING IS REQUIRED AND IS PREFERABLY EFFECTED IN SALT WATER OR IN A GLYCOL QUENCHANT.

Inventors

• 👤 Raymond Abbott De Forest
• 👤 Robert Linus Moore

Bibliographic Details