US3599060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
A multilayer metal contact for semiconductor device
Assignee: General Electric Co
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Filing: 1968-11-25
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Granted: 1971-08-10
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Expires: 1988-11-25
Abstract
Abstract A semiconductor device comprising a body of semiconductor material having a raised metallic contact on its surface consisting of a bottom region, a middle region, and a top region. The bottom region, which is contiguous with a surface of the semiconductor body, comprises a semiconductor adherence-promoting metallic layer having an upper surface of aluminum. The top region comprises a metallic layer of connectable material to which external electrodes or leads can be easily bonded. The middle region is between the bottom region and the top region and comprises essentially a barrier layer of metallic material. The barrier layer prevents the mixing of the bottom and top regions without deleteriously affecting the electrical and thermal conductivity between these two regions.
Inventors
- 👤 William M Triggs
- 👤 Carl J Byrns Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D99/00; H10P; H10P14/00; H10P14/40; H10P14/46; H10W72/00; H10W72/60
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
141 words
A semiconductor device comprising a body of semiconductor material having an insulation layer covering at least a portion of said body and provided with a contact-locating aperture exposing a portion of the surface of said body; and a metallic contact thereon having a bottom region comprising one or more metals from the group consisting of titanium, aluminum and intermetallic compounds of titanium and aluminum contiguous with said exposed surface and at least a portion of the surface of the insulating layer; the top surface of said bottom region being aluminum; a top region in said contact of gold; and a middle region in said contact between said bottom region and said top region and including a layer of barrier metallic material; said layer of barrier metallic material consisting of a layer of electroless nickel undercoated with palladium and overcoated with silver.
Claim 2
Dependent Claim
162 words
A semiconductor device comprising a body of semiconductor material having an insulating layer covering at least a portion of said body and provided with a contact-locating aperture exposing a portion of the surface of said body; and a metallic contact on said body having a bottom region comprising one or more metals from the group consisting of titanium, aluminum and intermetallic compounds thereof contiguous with said exposed surface and forming a conductive path bonded to said insulating layer extending across at least a portion of said insulating layer and having at least a portion of said contact extending beyond the edge of said body; the top surface of said bottom region being aluminum; a top region in said contact of gold; and a middle region in said contact between said bottom region and said top region and including a layer of barrier metallic material; said barrier metallic material consisting of a layer of electroless nickel undercoated with palladium and overcoated with silver.
Claim 3
Dependent Claim
150 words
A semiconductor device comprising a body of semiconductor material having an insulating layer covering at least a portion of said body including a layer of silicon dioxide and a layer of silicon nitride, and said insulating layer is provided with a contact-locating aperture exposing a portion of the surface of said body; and a metallic contact thereon having a bottom region comprising one or more metals from the group consisting of titanium, aluminum and intermetallic compounds thereof contiguous with said exposed surface; the top surface of said bottom region being aluminum, a middle region in said contact contiguous with said bottom region including a barrier layer of electroless nickel overcoated with a conduction layer of silver and undercoated with a catalytic layer of palladium; and a top region in said contact of connectable material contiguous with at least a portion of said middle region consisting of a layer of gold.
Claim 4
Dependent Claim
17 words
A semiconductor device as recited in claim 4 wherein said insulating layer includes a layer of glass.
Claim 5
Dependent Claim
139 words
A semiconductor device comprising a body of semiconductor material having an insulating layer covering at least a portion of said body and provided with a contact-locating aperture exposing a portion of the surface of said body; and metallic contact on said body including a bottom region comprising one or more metals from the group consisting of titanium, aluminum and intermetallic compounds of titanium and aluminum contiguous with said exposed surface; said bottom region having a top surface of aluminum; a top region in said contact comprising one or more metals from the group consisting of gold, silver, tin, lead and intermetallic compounds thereof; And a middle region in said contact between and directly contiguous with said bottom region and said top region and including a layer of electroless nickel; said layer of electroless nickel having an undercoating of palladium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-09 | 1975-02-08 | 1975-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-09 | 1979-02-08 | 1979-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-09 | 1983-02-08 | 1983-08-10 | $7700.00 | Window Closed / Lapsed |