US3598666A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of junctions in silicon carbide by selective diffusion of dopants
Assignee: General Electric Co
•
Filing: 1968-05-27
•
Granted: 1971-08-10
•
Expires: 1988-05-27
Abstract
Abstract IN SUBJECTING N-TYPE SIC TO DIFFUSION OF BORON AND ALUMINUM AT HIGH TEMPERATURES IN ORDER TO CREATE A P-TYPE REGION, DIFFUSION HAS BEEN FOUND NOT TO TAKE PLACE WHERE CRYSTALS OVERLAP. BY COVERING A SILICON CARBIDE CRYSTAL OR PLATELET WITH PIECES OF SILICON CARBIDE CRYSTALS WHERE DIFFUSION IS TO BE PREVENTED AND EXPOSING THE REMAINDER, DESIRED PATTERNS OR SYMBOLS CAN BE CREATED IN THE PLATELET WHICH WILL LIGHT UP WHEN SUITABLY CONTACTED. SURFACE JUNCTIONS MAY ALSO BE CREATED IN THIS WAY WHICH WILL PROVIDE LINES OF LIGHT ALONG THE EDGES OF THE DIFFERENT REGIONS.
Inventors
- 👤 Arrigo Addamiano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:18
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/014; Y; Y10; Y10S; Y10S438/00; Y10S438/931; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-09 | 1975-02-08 | 1975-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-09 | 1979-02-08 | 1979-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-09 | 1983-02-08 | 1983-08-10 | $7700.00 | Window Closed / Lapsed |