US3597706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Strip line switch
Assignee: AT&T Inc
•
Filing: 1969-10-01
•
Granted: 1971-08-03
•
Expires: 1989-10-01
Abstract
Abstract A switch for high frequency use is an integrated strip line structure wherein diodes are in shunt between the source and load and can be selectively biased to produce switching with a minimum of impedance mismatching.
Inventors
- 👤 Lynden U Kibler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 01:58
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/10; H01P1/15; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
130 words
A switch for use in high frequency systems comprising a member of intrinsic semiconductor material having first and second opposed surfaces, a conductive layer on one of said surfaces, a centrally located conducting member on the other of said surfaces, a plurality of conducting strips on said other of said surfaces, each of said strips being separated from said conducting member by a direct current blocking gap, a plurality of p-conductivity type regions in said member, each of said strips being in conductive contact with a p-region, each of said strips being approximately one-quarter wavelength long at the operating frequency of said switch, a plurality of n-conductivity type regions in said member in conductive contact with said conductive layer and forming a plurality of p-i-n diodes with said p-type regions.
Claim 2
Dependent Claim
130 words
A switch for use in high frequency systems comprising a member of intrinsic semiconductor material having first and second opposed surfaces, a conductive layer on one of said surfaces, a centrally located conducting member on the other of said surfaces, a plurality of conducting strips on said other of said surfaces, each of said strips being separated from said conducting member by a direct current blocking gap, a plurality of p-conductivity type regions in said member, each of said strips being in conductive contact with a p-region, each of said strips being approximately one-quarter wavelength long at the operating frequency of said switch, a plurality of n-conductivity type regions in said member in conductive contact with said conductive layer and forming a plurality of p-i-n diodes with said p-type regions.
Claim 3
Dependent Claim
13 words
A switch as claimed in claim 1 wherein said member is of silicon.
Claim 4
Dependent Claim
20 words
A switch as claimed in claim 1 and further including means for selectively forward and reverse biasing the p-i-n diodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-02 | 1975-02-01 | 1975-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-02 | 1979-02-01 | 1979-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-02 | 1983-02-01 | 1983-08-03 | $7700.00 | Window Closed / Lapsed |