Low capacitance field effect transistor

Abstract

Abstract A METHOD OF MAKING A FIELD EFFECT TRANSISTOR BY (A) REMOVING A PORTION OF MATERIAL FROM A FIRST TYPE CONDUCTIVITY SEMICONDUCTOR SUBSTRATE TO FORM A CONTINUOUS GROOVE IN THE FIRST SURFACE OF THE SUBSTRATE, (B) DIFFUSING AN IMPURITY INTO THE FIRST SURFACE AR SELECTED AREAS TO FORM, BENEATH AND EXTENDING TO THE SURFACE, AN OPPOSITE TYPE CONDUCTIVITY REGION OF DESIRED THICKNESS CONTIGUOUS WITH THE SURFACE OF THE GROOVE AND EXTENDING IN A CHANNEL CONFIGURATION ACROSS THE SURFACE AREA SURROUNDED BY THE GROOVE, (C) FORMING A LAYER OF SILICON DIOXIDE ON THE FIRST SURFACE EXTENDING DOWN INTO SAID GROOVE AND FORMING A THICK LAYER OF STRUCTURAL MATERIAL OVER THE SILICON DIOXIDE LAYER, (D) REMOVING PORTIONS OF THE SEMICONDUCTOR MATERIAL TO FORM A SECOND SURFACE HAVING A PLANE WHICH INTERACTS THE SILICON DIOXIDE LAYER AT THE BOTTOM OF THE GROOVE, (E) DIFFUSING AN IMPURITY INTO THE SECOND SURFACE AT SELECTED AREAS THEREOF TO FORM AN OPPOSITE CONDUCTIVITY CHANNEL EXTENDING PARALLEL TO THE FIRST CHANNEL CONFIGURATION AND TERMINATING ON BOTH ENDS AT THE POSITIONS WHERE THE PLANE OF THE SECOND SURFACE INTERACTS THE SILICON DIOXIDE LAYER.

Inventors

• 👤 Ronald L Koepp

Bibliographic Details