US3596150A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic transistor circuit
Assignee: Robert Bosch GmbH
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Filing: 1969-05-28
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Granted: 1971-07-27
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Expires: 1989-05-28
Abstract
Abstract A semiconductor body of collector material has a first and second base region diffused into the collector material, and a first and second emitter region diffused into the base regions. A narrow channel of base material connects the two base regions. A metallic coating connects the first emitter region with the second base region. This metallic coating extends over the connecting channel and is situated directly on the surface of the semiconductor body. The first emitter region may be extended into the second base region directly under the metal coating which connects the first emitter with the second base.
Inventors
- 👤 Gottfried Berthold
- 👤 Hans Linstedt
- 👤 Gunter Matthai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:16
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/641; H10D84/642; H10D84/611; H10D84/613
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
31 words
A transistor circuit as set forth in claim 1, wherein said first emitter region has a first emitter extension situated directly underneath said metallic coating, and extending for the length thereof.
Claim 2
Dependent Claim
21 words
A transistor circuit as set forth in claim 2, wherein said first emitter extension further extends into said second base region.
Claim 3
Dependent Claim
19 words
A transistor circuit as set forth in claim 3, wherein said first emitter region is of substantially ring shape.
Claim 4
Dependent Claim
50 words
A transistor circuit as set forth in claim 5, wherein said transistor circuit further comprises resistance means constituting a resistance in parallel to the emitter-base junction of said second transistor; wherein said transistor circuit further comprises protective diode means electrically in parallel to the emitter-collector junction of said second transistor.
Claim 5
Dependent Claim
79 words
A transistor circuit as set forth in claim 5, wherein said second emitter region comprises a first and second emitter extension at least partially enclosing a base subregion, the boundary between said second emitter extensions and said base subregion constituting a base-emitter junction; further comprising second emitter metallic coating means short circuiting a portion of said base-emitter junction, whereby, effectively, said protective diode means and said resistance in parallel to said emitter-base junction of said second transistor are created.
Claim 6
Dependent Claim
76 words
A transistor circuit as set forth in claim 6, wherein said resistance in parallel to the base-emitter junction of said second transistor is RL; wherein said connecting channel of base material constitutes a second resistance RT; wherein the base surface of said first transistor covered by said first and second emitters is denoted by FTT; wherein the base surface of said second transistor covered by said first and second emitters is denoted by FLT; and wherein:
Claim 7
Dependent Claim
45 words
A transistor circuit as set forth in claim 7, wherein said second emitter comprises a central portion; wherein said first and second emitter extension extend directly from said central portion; and where the contact point of said resistance RL is situated at said central portion.
Claim 8
Dependent Claim
93 words
A transistor circuit as set forth in claim 8, wherein said first emitter region is of substantially rectangular shape, said rectangular shape having an internal and an external perimeter; wherein said connecting channel enters the first base region substantially at a first corner of said rectangular shape; wherein the distance between said external and said internal perimeter of said rectangular shape is decreased at the corner of said rectangular shape diametrically opposite to said first corner, thus creating additional base region; and wherein additional metallic coating is applied to said additional base region.
Claim 9
Dependent Claim
38 words
A transistor circuit as set forth in claim 9, wherein the length of said additional metallic coating along said outside perimeter is at least as great as said outside perimeter divided by the amplification of said second transistor.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-26 | 1975-01-25 | 1975-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-26 | 1979-01-25 | 1979-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-26 | 1983-01-25 | 1983-07-27 | $7700.00 | Window Closed / Lapsed |