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US3593190A Expired / Lapsed US ⏱️ 0.0 years remaining

Electron beam pumped semiconductor laser having an array of mosaic elements

Assignee: Texas Instruments Inc
•
Filing: 1969-04-16
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Granted: 1971-07-13
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Expires: 1989-04-16
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Abstract

Abstract An electron beam pumped laser wherein the radiating crystal comprises a semiconductor wafer and a mosaic array of radiating elements. Each radiating element in the array emits radiation in a direction coinciding with the axis of the pumping electron beam. Stimulated emission transverse to the pumping electron direction is suppressed by dimensioning each radiating element to prevent gain in the transverse direction. The mosaic of radiating elements may be formed by etching or cutting slots in a semiconductor slice or by direct growth on the semiconductor slice.

Inventors

  • 👤 Alan R Reinberg

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 16:19
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/05; H01S3/06; H01S3/09; H01S3/0955; H01S3/0959

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 74 words
A radiating crystal in an electron beam pumped laser, comprising: a semiconductor slice, and a mosaic of semiconductor radiating elements arrayed over the surface of the semiconductor slice in the direction of the incident electron beam and dimensioned to quench stimulated emission of radiation in a direction transverse to the beam axis and each of said mosaic elements forming an optical cavity to stimulate radiation along an axis parallel to the incident electron beam.
Claim 2
Dependent Claim 74 words
A radiating crystal in an electron beam pumped laser, comprising: a semiconductor slice, and a mosaic of semiconductor radiating elements arrayed over the surface of the semiconductor slice in the direction of the incident electron beam and dimensioned to quench stimulated emission of radiation in a direction transverse to the beam axis and each of said mosaic elements forming an optical cavity to stimulate radiation along an axis parallel to the incident electron beam.
Claim 3
Dependent Claim 33 words
A radiating crystal in an electron beam pumped laser as set forth in claim 1 wherein the longest dimension transverse the incident electron beam for each radiating element does not exceed 15 microns.
Claim 4
Dependent Claim 32 words
A radiating crystal in an electron beam pumped laser as set forth in claim 1 wherein the mosaic of radiating elements comprises an array of single crystals grown on the semiconductor slice.
Claim 5
Dependent Claim 46 words
A radiating crystal in an electron beam pumped laser as set forth in claim 3 including a filler material opaque to the radiating wavelength of the grown crystals surrounding each of the mosaic of radiating elements to further minimize stimulated emission transverse of the electron beam.
Claim 6
Dependent Claim 81 words
A radiating crystal in an electronic beam pumped laser comprising: a semiconductor slice, and a grid formed in one surface of the semiconductor slice and extending to a depth in excess of the maximum electron energy loss to quench the stimulated emission of radiation in a direction transverse to the beam axis and portions of said one surface forming an optical cavity with the opposite surface of said slice to stimulate radiation along an axis parallel to the incident electron beam.
Claim 7
Dependent Claim 81 words
A radiating crystal in an electronic beam pumped laser comprising: a semiconductor slice, and a grid formed in one surface of the semiconductor slice and extending to a depth in excess of the maximum electron energy loss to quench the stimulated emission of radiation in a direction transverse to the beam axis and portions of said one surface forming an optical cavity with the opposite surface of said slice to stimulate radiation along an axis parallel to the incident electron beam.
Claim 8
Dependent Claim 29 words
A radiating crystal in an electron beam pumped laser as set forth in claim 5 wherein said grid comprises an array of transverse slots etched into said semiconductor slice.
Claim 9
Dependent Claim 46 words
A radiating crystal in an electron beam pumped laser as set forth in claim 6 including a filler material opaque to the radiating wavelength of the semiconductor slice, said filler material deposited into the etched slots to further minimize stimulated emissiOn transverse of the electron beam.
Claim 10
Dependent Claim 66 words
A radiating crystal in an electron beam pumped laser as set forth in claim 5 wherein said grid comprises an array of transverse lines of a diffused dopant opaque to the radiating wavelength of the semiconductor slice and extending to a depth in excess of the maximum electron energy loss to quench the stimulated emission of radiation in a direction transverse of the incident electron beam.
Claim 11
Dependent Claim 93 words
An electron beam pumped laser comprising: a semiconductor slice, a source of high energy electrons directed to and penetrating into one face of the semiconductor slice to cause stimulated emission of radiation therefrom, and a mosaic of semiconductor radiating elements arrayed over the faces of the semiconductor slice exposed to the electron beam and dimensioned to quench stimulated emission of radiation in a direction transverse to the beam axis and each of said mosaic elements forming an optical cavity to stimulate radiation in a direction along an axis parallel to said electron beam.
Claim 12
Dependent Claim 93 words
An electron beam pumped laser comprising: a semiconductor slice, a source of high energy electrons directed to and penetrating into one face of the semiconductor slice to cause stimulated emission of radiation therefrom, and a mosaic of semiconductor radiating elements arrayed over the faces of the semiconductor slice exposed to the electron beam and dimensioned to quench stimulated emission of radiation in a direction transverse to the beam axis and each of said mosaic elements forming an optical cavity to stimulate radiation in a direction along an axis parallel to said electron beam.
Claim 13
Dependent Claim 58 words
An electron beam pumped laser as set forth in claim 9 wherein the mosaic of radiating elements comprises a grid formed into one surface of the semiconductor slice by a process of diffusing a dopant opaque to the radiating wavelength to a depth in excess of the maximum electron energy loss to quench the stimulated emission of radiation.
Claim 14
Dependent Claim 28 words
An electron beam pumped laser as set forth in claim 9 wherein the mosaic of radiating elements comprises an array of single crystals grown on the semiconductor slice.
Claim 15
Dependent Claim 42 words
An electron beam pumped laser as set forth in claim 11 including a filler material opaque to the radiating wavelength of the semiconductor slice surrounding each of the mosaic of radiating elements to further minimize stimulated emission transverse of the electron beam.

References Cited (Backward Citations)

US3239688A Cited
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US3349475A Cited
US3319068A Cited
US3290539A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-07-12 1975-01-11 1975-07-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-07-12 1979-01-11 1979-07-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-07-12 1983-01-11 1983-07-13 $7700.00 Window Closed / Lapsed

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