US3593046A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Communication system including a plurality of semiconductive circuit arrangements using gunn effect devices
Assignee: International Standard Electric Corp
•
Filing: 1968-02-09
•
Granted: 1971-07-13
•
Expires: 1988-02-09
Abstract
Abstract A communication system designed with semiconductive circuit arrangements using ''''Gunn Effect'''' devices exhibiting high field instability effects when an applied electrical field exceeds certain critical values. The transmitter has a plurality of ''''Gunn Effect'''' devices being connected to a separate input channel. Input signals are time division multiplexed and transmitted to a receiver having one ''''Gunn Effect'''' device with provision to separate the signals into their individual channels.
Inventors
- 👤 Carl Peter Sandbank
- 👤 David Lane Thomas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:13
CPC Classifications
H; H10; H10D; H10D99/00; H10N; H10N80/00; H10N80/10; H10N89/00; H10N89/02
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
59 words
A communication system according to claim 1 wherein a pair of said other contact areas provides the means for detecting the modulated voltage across said high field domain at any point along the length of said body, the width of each one of said pair of other contact areas being comparable with the width of said high field domain.
Claim 2
Dependent Claim
20 words
A communication system according to claim 1 wherein said other contact area is insulated from said surface of said body.
Claim 3
Dependent Claim
13 words
A communication system according to claim 3 wherein said insulating material is silica.
Claim 4
Dependent Claim
32 words
A communication system according to claim 1 wherein said body of semiconductive material is provided by a Group III-V semiconductor having N-type conductivity, high resistivity (106 to 108 ohms cm.) semiconductive material.
Claim 5
Dependent Claim
20 words
A communication system according to claim 1 wherein said body of semiconductive material is provided by a piezoelectric semiconductive material.
Claim 6
Dependent Claim
22 words
A communication system as claimed in claim 5 wherein said Group III-V semiconductor having N-type conductivity is gallium arsenide or indium phosphide.
Claim 7
Dependent Claim
20 words
A communication system as claimed in claim 5 wherein said high resistivity semiconductive material is either germanium or gallium arsenide.
Claim 8
Dependent Claim
16 words
A communication system as claimed in claim 6 wherein said piezoelectric semiconductive material is cadmium sulfide.
References Cited (Backward Citations)
US3365583A
Cited
US3452222A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-12 | 1975-01-11 | 1975-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-12 | 1979-01-11 | 1979-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-12 | 1983-01-11 | 1983-07-13 | $7700.00 | Window Closed / Lapsed |