US3593037A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Cell for mos random-acess integrated circuit memory
Assignee: Intel Corp
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Filing: 1970-03-13
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Granted: 1971-07-13
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Expires: 1990-03-13
Abstract
Abstract A cell readily adaptable for use in a random-access integrated circuit memory which utilizes metal-oxide-semiconductors (MOS) devices is disclosed. The cell is a dynamic storage device which utilizes the parasitic capacitance associated with the lead and gate of an MOS device for storage. The cell is adaptable for use in a memory which has a separate select-write line, select-read line, write data line and read data line, and is not particularly sensitive to the signal level on these lines as are previous cells.
Inventors
- 👤 Marcian E Hoff Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:43
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/405
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
34 words
The cell defined in claim 1 wherein said first and second MOS devices are connected to one another and said capacitor is the parasitic capacitance between said connection and a substrate supporting the cell.
Claim 2
Dependent Claim
23 words
The cell defined in claim 2 wherein said substrate is an N-type silicon and said devices are a P-channel enhancement mode MOS-FET devices.
Claim 3
Dependent Claim
156 words
A cell for an MOS random-access integrated circuit memory which utilizes a separate select-read, select-write, read data and write data lines comprising: a capacitor adaptable for storing an electrical charge; a first MOS device having a gate and at least two other terminals, said gate lead coupled to said select-write line, one of said other terminals coupled to said write data line and the other of said other terminals coupled to said capacitor; a second MOS device having a gate and at least two other terminals, said gate coupled to said capacitor, one of said other terminals coupled to said read data line; and, a third MOS device having a gate and at least two other terminals, said gate coupled to said select-read line, one of said other terminals being coupled to said write data line and the other of said other terminals coupled to the other of said other terminals of said second MOS device.
Claim 4
Dependent Claim
44 words
The cell defined in claim 3 wherein said other of said other terminals of said first MOS device is connected to said gate of said second MOS device and said capacitor is the parasitic capacitance between said connection and a substrate supporting said cell.
Claim 5
Dependent Claim
23 words
The cell defined in claim 5 wherein said substrate is an N-type silicon and said devices are a P-channel enhancement mode MOS-FET devices.
Claim 6
Dependent Claim
161 words
A cell for an MOS random-access integrated circuit memory which utilizes a separate select-read, select-write, write data and read data lines comprising: a capacitor adaptable for storing an electrical charge; a first MOS device having a gate and at least two other terminals, said gate terminal coupled to said select-write line, one of said other terminals coupled to said write data line and the other of said other terminals coupled to said capacitor; a second MOS device having a gate and at least two other terminals, and gate terminal coupled to said capacitor and one of said other terminals coupled to said write data line; and a third MOS device having at least a gate and two other terminals, said gate terminal being coupled to said select-read line, one of said other terminals being coupled to said read date line and the other of said other terminals being coupled to the other of said other terminals of said second MOS device.
Claim 7
Dependent Claim
44 words
The cell defined in claim 7 wherein said other of said other terminals of said first MOS device is connected to said gate of said second MOS device and said capacitor is the parasitic capacitance between said connection and a substrate supporting the cell.
Claim 8
Dependent Claim
23 words
The cell defined in claim 8 wherein said substrate is an N-type silicon and said devices are a P-channel enhancement mode MOS-FET devices.
Claim 9
Dependent Claim
158 words
A cell for an MOS random-access integrated circuit memory which utilizes a separate select-read, select-write, read data, write data and common lines comprising: a capacitor adaptable for storing an electrical charge; a first MOS device having a gate and at least two other terminals, said gate terminal coupled to said select-write line, one of said other terminals coupled to said write data line and the other of said other terminals coupled to said capacitor; a second MOS device having a gate and at least two other terminals, said gate terminal coupled to said capacitor and one of said other terminals coupled to said common line; and, a third MOS device having at least a gate and two other terminals, said gate terminal coupled to said select-read line, one of said other terminals coupled to said read data line and the other of said other terminals coupled to said other of saiD other terminals of said second MOS device.
Claim 10
Dependent Claim
44 words
The cell defined in claim 10 wherein said other of said other terminals of said first MOS device is connected to said gate of said second MOS device and said capacitor is the parasitic capacitance between said connection and a substrate supporting the cell.
Claim 11
Dependent Claim
22 words
The cell defined in claim 11 wherein said substrate is an N-type silicon and said devices are P-channel enhancement mode MOS-FET devices.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-12 | 1975-01-11 | 1975-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-12 | 1979-01-11 | 1979-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-12 | 1983-01-11 | 1983-07-13 | $7700.00 | Window Closed / Lapsed |