US3592706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective etching technique for semiconductors
Assignee: AT&T Inc
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Filing: 1968-03-20
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Granted: 1971-07-13
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Expires: 1988-03-20
Abstract
Abstract ALLOY SOLUTION, SO RESULTING IN UNDERSATURATION OF THE SOLUTION WITH RESPECT TO THE MATERIAL TO BE ETCHED AND CONTINUOUS DISSOLUTION OF THAT MATERIAL AT THE SOLID-LIQUID INTERFACE. PREFERENTIAL ETCHING OF CRYSTALLINE MATERIALS IS EFFECTED BY PROVIDING A LIQUID-ALLOY SOLUTION COMPRISING THE MATERIAL TO BE ETCHED AND ONE OR MORE OTHER COMPONENTS AT A POINT INTERMEDIATE A VAPOR AND THE SOLID MATERIAL TO BE ETCHED. IN THE OPERATION OF THE PROCESS, THE VAPOR WHICH IS CAPABLE OF REACTING CHEMICALLY WITH THE MATERIAL TO BE ETCHED SELECTIVELY REMOVES THAT MATERIAL FROM THE LIQUID-
Inventors
- 👤 Richard S Wagner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:37
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23F; C23F4/00; H10P50/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-12 | 1975-01-11 | 1975-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-12 | 1979-01-11 | 1979-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-12 | 1983-01-11 | 1983-07-13 | $7700.00 | Window Closed / Lapsed |