US3590343A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resonant gate transistor with fixed position electrically floating gate electrode in addition to resonant member
Assignee: Westinghouse Electric Corp
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Filing: 1969-01-31
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Granted: 1971-06-29
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Expires: 1989-01-31
Abstract
Abstract A resonant gate transistor is provided with a gate electrode with means to bias the gate so that normally off detectors such as P-channel MOSFETs can be employed, such detectors being more compatible with NPN bipolar transistors for integration than normally on N-channel detectors. The gate electrode is preferably biased by a floating diode of very small capacitance so as to avoid charge leakage and reduced gain. The gate electrode permits large area electrostatic coupling with the vibratory member.
Inventors
- 👤 Harvey C Nathanson
- 👤 John R Davis Jr
- 👤 Terence R Kiggins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:51
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/085
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
65 words
The subject matter of claim 1 wherein: said electric field responsive member is a surface potential controlled transistor having source and drain regions of a first conductivity type within the surface of the substrate region of a second conductivity type and defining a channel region therebetween; an insulating layer is on said channel region and said fixed gate electrode is positioned on said insulating layer.
Claim 2
Dependent Claim
20 words
The subject matter of claim 1 wherein: said electric field responsive means is a normally off surface potential controlled transistor.
Claim 3
Dependent Claim
24 words
The subject matter of claim 3 wherein: said fixed gate electrode is the same in area as the effective area of said channel region.
Claim 4
Dependent Claim
59 words
The subject matter of claim 3 wherein: said fixed gate electrode is larger in area than the effective area of said channel region; said insulating layer is on said channel region as well as on surface portions adjacent said channel region and has a thickness on said adjacent surface portions at least five times that on said channel region.
Claim 5
Dependent Claim
160 words
A semiconductor integrated circuit including resonant gate transistor and bipolar transistor elements comprising: a substrate of a first conductivity type; a first region of a second conductivity type on said substrate; source and drain regions of said first conductivity type within a surface of said first region remote from said substrate, and source and drain regions being spaced and defining a channel region therebetween at said surface; an insulating layer on said surface at least over said channel region; a gate electrode positioned on said insulating layer over said channel region; a vibratory member positioned over said gate electrode; a second region of said second conductivity type on said substrate spaced from said first region and serving as a bipolar transistor collector region, a base region of said first conductivity type within a surface of said collector region remote from said substrate; an emitter region second conductivity type within a surface of said base region remote from said collector region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-28 | 1974-12-28 | 1975-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-28 | 1978-12-28 | 1979-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-28 | 1982-12-28 | 1983-06-29 | $7700.00 | Window Closed / Lapsed |