A four phase diode-fet shift register

Abstract

Abstract A FOUR PHASE DIODE-FIELD-EFFECT EFFECT TRANSISTOR SHIFT REGISTER STAGE IS DISCLOSED. EACH REGISTER STAGE INCLUDES TWO IDENTICAL CIRCUITS EACH COMPRISING TWO DIODES AND A FIELD-EFFECT TRANSISTOR. EACH CIRCUIT CONTAINS A NODE WHICH IS CONNECTED TO THE GATE OF THE FIELD EFFECT TRANSISTOR OF A SUCCEEDING CIRCUIT OR TO THE FIRST CIRCUIT OF A SIMILAR SHAFT REGISTER STAGE. PULSED VOLTAGE SOURCE $1 AND $2 ARE SERIALLY DISPOSED IN ONE OF THE CIRCUITS AND PULSED VOLTAGE SOURCE $3 AND $4 ARE SERIALLY DISPOSED IN THE OTHER OF THE CIRCUITS OF EACH SHIFT REGISTER STAGE. DEPENDING ON WHETHER THE FIELD EFFECT TRANSISTORS ARE N-CHANNEL OR P-CHANNEL, PULSED VOLTAGES OF THE PROPER POLARITY ARE APPLIED IN SEQUENCE TO APPLY A VOLTAGE TO THE NODE OF EACH CIRCUIT IN TURN. IF THE FET OF THE FIRST CIRCUIT OF A STAGE IS CONDITIONED BY PLACING INFORMATION ON ITS GATE, AND $1 AND $2 PULSES ARE APPLIED TO THE CIRCUIT IN SEQUENCE, THE GATE CAPACITANCE OF THE FET OF THE SUCCEEDING CIRCUIT IS CONDITIONED, IN RESPONSE THERETO. UPON APPLICATION OF THE $3 AND $4 PULSES TO THE SUCCEEDING CIRCUIT, THE INFORMATION PULSE ON THE GATE CAPACITANCE OF THE FIELD-EFFECT TRANSISTOR OF THE SUCCEEDING CIRCUIT IS TRANSFERRED IN INVERTED FORM TO ITS OUTPUT.

Inventors

• 👤 Lewis M Terman

Bibliographic Details