Patent US2657308A successfully refreshed from Google Patents.
US3587166A
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Insulated isolation techniques in integrated circuits
Assignee: Texas Instruments Inc
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Filing: 1965-02-26
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Granted: 1971-06-28
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Expires: 1985-02-26
Abstract
Abstract A METHOD OF FORMING A CIRCUIT COMPONENT IN A REGION OF LOW-RESISTIVITY SEMICONDUCTOR MATERIAL THAT IS LOCATED INBUT ISOLATED FROM A SEMICONDUCTOR SUBSTRATE BY THE FORMATION OF A REGION OF HIGH-RESISTIVITY SEMICONDUCTOR MATERIAL OF ONE CONDUCTIVITY TYPE IN THIS REGION OF LOW-RESISTIVITY SEMICONDUCTOR MATERIAL OF THE SAME TYPE. A CONTACT IS MADE TO THIS LOWRESISTIVITY REGION OF THE CIRCUIT COMPONENT WHICH IS NORMALLY INACCESSIBLE (BURIED) EXCEPT BY A FINAL DIFFUSION STEP BY MAKING OHMIC CONTACT TO THE SURFACE OF THE LOW-RESISTIVITY REGION. ALSO DISCLOSED IS THE STRUCTURE FORMED THEREBY.
Inventors
- 👤 Earl Glynn Alexander
- 👤 Walter Richard Runyan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/2925; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/05; Y10S148/085; Y10S438/00; Y10S438/977
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-27 | 1974-12-27 | 1975-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-27 | 1978-12-27 | 1979-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-27 | 1982-12-27 | 1983-06-28 | $7700.00 | Window Closed / Lapsed |