US3586554A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for increasing photoresist adhesion to a semiconductor by treating the semiconductor with a disilylamide
Assignee: International Business Machines Corp
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Filing: 1969-01-15
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Granted: 1971-06-22
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Expires: 1989-01-15
Abstract
Abstract VERY SMALL PATTERNS MAY BE ETCHED IN SILICON DIOXIDE OR OTHER OXIDE SURFACES USING PHOTORESIST TO MASK AREAS OF SURFACES WHERE ETCHING IS NOT DESRIED BY APPLYING A DISILYLAMIDE TO THE SURFACE TO INCREASE THE AHESION OF THE PHOTORESIST. THE PROCESS IS PARTICULARLY USEFUL FOR ETCHING PATTERNS IN SILICON DIOXIDE MASKS USED IN THE FABRICATION OF MICROMINIATURE SEMICONDUCTOR DEVICES.
Inventors
- 👤 Roger A Couture
- 👤 Robert T Gleason
- 👤 John J Lajza Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:04
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0751; H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-21 | 1974-12-21 | 1975-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-21 | 1978-12-21 | 1979-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-21 | 1982-12-21 | 1983-06-22 | $7700.00 | Window Closed / Lapsed |