Method of producing a germaniumplanar transistor,particularly of pnp-type
Abstract
Abstract DESCRIBED IS A METHOD OF PRODUCING A GERMANIUM PLANAR TRANSISTOR, ESPECIALLY OF PNP-TYPE, WITH A BASE AND EMITTER REGION PRODUCED BY DIFFUSION. THE TRANSISTOR HAS P-N JUNCTIONS WHICH IN THEIR CENTRAL PARTS ARE FLAT, ADJACENT AND PARALLEL TO EACH OTHER. THE METHOD IS CHARACTERIZED BY THE FACT THAT, FOLLOWING THE PRODUCTION OF THE FIRST TUB-SHAPED BASE REGION, AN ACTIVATOR DETERMINING THE EMITTER REGION IS SO DIFFUSED INTO THE BASE REGION, IT INFLUENCES THE COLLECTORBASE JUNCTION, WHEREBY THE PORTIONS OF THE COLLECTOR-BASE JUNCTION POSITIONED OPPOSITE THE PLANAR CENTRAL PORTION OF THE EMITTER-BASE JUNCTION ARE PREVENTED, IN CONTRADISTINCTION TO THE EDGE PORTIONS OF SAID JUNCTION, FROM A NOTICEABLE PENTETRATION INTO THE COLLECTOR REGION, AS A RESULT OF THE INFULENCE OF THE EMITTER ACTIVATOR. THE SHAPE OF THE COLLECTOR-BASE JUNCTION OBTAINED IN THIS MANNER, IS MAINTAINED IN THE FINISHED TRANSISTOR.
Inventors
- 👤 Dieter Pommerrenig
Bibliographic Details
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