US3582690A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor strain sensor with controlled sensitivity
Assignee: General Electric Co
•
Filing: 1969-06-09
•
Granted: 1971-06-01
•
Expires: 1989-06-09
Abstract
Abstract A field effect transistor is used as a controlled sensitivity strain sensor by varying the gate-to-source voltage or other equivalent gate electrode parameter to change the strain sensitivity of conduction through the channel. In general, the gage factor decreases as the gate-to-source voltage is increased. Applications include temperature compensation and scale linearization.
Inventors
- 👤 Alexander J Yerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:22
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/18
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
121 words
A controlled sensitivity semiconductor strain sensor device comprising: a field effect transistor having source and drain electrodes and a body of semiconductor therebetween providing a channel for majority charge carrier flow, and a gate electrode overlying at least a portion of the channel to which a voltage is applied for controlling the conductivity of the channel, means for subjecting said field effect transistor to a strain, circuit means for applying voltage between said source and drain electrodes and for detecting the change in resistance that occurs as the result of the strain, and means for applying an adjustable gate-to-source voltage that is a function of a phenomenon to be controlled, to thereby change the strain sensitivity of the field effect transistor.
Claim 2
Dependent Claim
44 words
A device as set forth in claim 2 wherein said circuit means is a bridge circuit including at least two field effect transistors, and said means for applying an adjustable gate-to-source voltage applies the same gate-to-source voltage to both of said field effect transistors.
Claim 3
Dependent Claim
21 words
A device as set forth in claim 3 wherein said field effect transistors are p-type silicon insulated gate field effect transistors.
Claim 4
Dependent Claim
50 words
A device as set forth in claim 2 wherein said means for applying an adjustable gate-to-source voltage that is a function of a phenomenon to be controlled comprises means for sensing the ambient temperature, and means for generating a voltage that is a function of the sensed value of temperature.
Claim 5
Dependent Claim
65 words
A device as set forth in claim 2 wherein said circuit means includes means for generating an output voltage indicative of the change in resistance, and said means for applying an adjustable gate-to-source voltage that is a function of a phenomenon to be controlled includes feedback means for coupling at least a portion of said output voltage thereto to result in linearizing said output voltage.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-31 | 1974-11-30 | 1975-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-31 | 1978-11-30 | 1979-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-31 | 1982-11-30 | 1983-06-01 | $7700.00 | Window Closed / Lapsed |