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US3581097A Expired / Lapsed US ⏱️ 0.0 years remaining

Solid-state image pickup device

Assignee: Hitachi Ltd
•
Filing: 1967-03-13
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Granted: 1971-05-25
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Expires: 1987-03-13
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Abstract

Abstract The solid-state image pickup device is equipped with a radiation-sensitive surface formed with a plurality of radiationsensitive elements disposed in a matrix form, two groups of conductive strips for impressing scanning pulses to said radiation-sensitive elements, first scanning-pulse-distributing means connected to one of said two groups of conductive strips, second scanning-pulse-distributing means connected, via transistors having switching action, to the other of said two groups, and a detector for deriving, as electric signals, the changes in the characteristics of said radiation-sensitive elements.

Inventors

  • 👤 Masao Hibi
  • 👤 Takeshi Nishimura

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 01:42
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/70; H04N25/76

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 105 words
A solid-state image pickup device comprising: a base panel having a plurality of radiation-sensitive elements disposed in matrix form; first and second groups of conductive strips with said radiation-sensitive elements disposed therebetween; first scanning-voltage-distributing means connected to said second group for selectively distributing a scanning voltage thereto; a plurality of transistors having switch action control terminals respectively, each said control terminal being connected to each one of said first groups of conductive strips; second scanningvoltage-distributing means connected to said transistors for selectively distributing a scanning voltage thereto; and signaldetecting means for deriving electrical signals resulting from changes in the impedance characteristics of said radiationsensitive elements.
Claim 2
Dependent Claim 105 words
A solid-state image pickup device comprising: a base panel having a plurality of radiation-sensitive elements disposed in matrix form; first and second groups of conductive strips with said radiation-sensitive elements disposed therebetween; first scanning-voltage-distributing means connected to said second group for selectively distributing a scanning voltage thereto; a plurality of transistors having switch action control terminals respectively, each said control terminal being connected to each one of said first groups of conductive strips; second scanningvoltage-distributing means connected to said transistors for selectively distributing a scanning voltage thereto; and signaldetecting means for deriving electrical signals resulting from changes in the impedance characteristics of said radiationsensitive elements.
Claim 3
Dependent Claim 53 words
A solid-state image pickup device according to claim 1, wherein each said switch action control terminal corresponds to a base of one of said transistors, each collector of said transistors being connected to a point on said second scanning-voltage-distributing means, their emitters being connected to the other side of said second scanning-voltage-distributing means.
Claim 4
Dependent Claim 123 words
A solid-state image pickup device comprising: a base panel having a plurality of radiation-sensitive elements disposed in matrix form; first and second groups of conductive strips with said radiation-sensitive elements disposed therebetween; first scanning-voltage-distributing means connected to said second group of conductive strips for selectively distributing a scanning voltage thereto; a plurality of first transistors, each base of which is connected to each one of said first groups of conductive strips; a plurality of second transistors coupled to said first transistors respectively; second scanning-voltage-distributing means connected to each base of said second transistors for selectively distributing a scanning voltage thereto; and signal-detecting means coupled to said second transistors, thereby deriving electrical signals resulting from charges in the impedance characteristics of said radiation-sensitive elements.
Claim 5
Dependent Claim 123 words
A solid-state image pickup device comprising: a base panel having a plurality of radiation-sensitive elements disposed in matrix form; first and second groups of conductive strips with said radiation-sensitive elements disposed therebetween; first scanning-voltage-distributing means connected to said second group of conductive strips for selectively distributing a scanning voltage thereto; a plurality of first transistors, each base of which is connected to each one of said first groups of conductive strips; a plurality of second transistors coupled to said first transistors respectively; second scanning-voltage-distributing means connected to each base of said second transistors for selectively distributing a scanning voltage thereto; and signal-detecting means coupled to said second transistors, thereby deriving electrical signals resulting from charges in the impedance characteristics of said radiation-sensitive elements.
Claim 6
Dependent Claim 22 words
A solid-state image pickup device according to claim 3, wherein compensating resistors are connected to the emitters of said first transistors, respectively.
Claim 7
Dependent Claim 136 words
A solid-state image pickup device comprising a base panel having a plurality of radiation-sensitive elements disposed in matrix form, first and second groups of orthogonally disposed conductive strips with said elements disposed therebetween, a first scanning pulse source connected to a first delay line, said said first group of conductive strips being connected at spaced points along said first delay line, a second scanning pulse source connected to a second delay line, a transistor amplifier switch for each respective conductive strip of said second group of conductive strips having its input connected to the strip and its output connected to a point along said second delay line, and signal-detecting means connected between said second scanning pulse source and said second delay line for deriving electric signals resulting from changes in the impedance characteristics of said elements.
Claim 8
Dependent Claim 136 words
A solid-state image pickup device comprising a base panel having a plurality of radiation-sensitive elements disposed in matrix form, first and second groups of orthogonally disposed conductive strips with said elements disposed therebetween, a first scanning pulse source connected to a first delay line, said said first group of conductive strips being connected at spaced points along said first delay line, a second scanning pulse source connected to a second delay line, a transistor amplifier switch for each respective conductive strip of said second group of conductive strips having its input connected to the strip and its output connected to a point along said second delay line, and signal-detecting means connected between said second scanning pulse source and said second delay line for deriving electric signals resulting from changes in the impedance characteristics of said elements.
Claim 9
Dependent Claim 62 words
A solid-state image pickup device as defined in claim 5 wherein said transistor amplifier switches each include a transistor having its base electrode connected with a respective one of said second group of conductive strips, its collector electrode connected to a point on said second delay line, and iTs emitter electrode connected to the other side of said second scanning pulse source.
Claim 10
Dependent Claim 97 words
A solid-state image pickup device as defined in claim 5 wherein said transistor amplifier switches each include a plurality of first transistors each having its base electrode connected with a respective one of said second group of conductive strips and its emitter electrode connected to the other side of said second scanning pulse source, and a plurality of second transistors each having its base electrode connected to a point on said second delay line, its collector electrode connected to a DC bias source and its emitter electrode connected to the collector electrode of a respective first transistor.

References Cited (Backward Citations)

US3348064A Cited
US3333106A Cited
US3488508A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-05-24 1974-11-23 1975-05-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-05-24 1978-11-23 1979-05-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-05-24 1982-11-23 1983-05-25 $7700.00 Window Closed / Lapsed

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