US3580745A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: US Philips Corp
•
Filing: 1966-05-27
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Granted: 1971-05-25
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Expires: 1986-05-27
Abstract
Abstract A METHOD OF MAKING DIFFERENT CIRCUIT ELEMENTS INTEGRATED IN A COMMON SEMICONDUCTIVE WAFER BY MODIFYING THE PROPERTIES AND COMPOSITION OF THE OXIDE PORTIONS WHICH COVER THE SURFACE OF THE WAFER OVER THE ELEMENTS. VARIOUS METHODS ARE DESCRIVED FOR OBTAINING DIFFERENT OXIDE PROPERTIES, FOR EXAMPLE, PROVIDING A LAYER OF SILICON MONOXIDE OVER THE USUAL SILICON DIOXIDE, OR SUBJECTING SELECTED OXIDE COATING PORTIONS TO X-RADIATIONS OR ULTRAVIOLET RADIATION.
Inventors
- 👤 Else Kooi
- 👤 Aant Bouwe Daniel Van Der Meer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:17
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D84/00; H10D84/40; H10D84/401; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/106; Y10S148/117
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-24 | 1974-11-23 | 1975-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-24 | 1978-11-23 | 1979-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-24 | 1982-11-23 | 1983-05-25 | $7700.00 | Window Closed / Lapsed |