Method of precipitating insulating protective layers comprised of inogranic material upon the surfaces of semiconductor wafers

Abstract

Abstract DESCRIBED IS A METHOD OF PRECIPITATING INSULATING PROTECTIVE LAYERS OF INORGANIC MATERIAL AT THE SURFACE OF HEATED SEMICONDUCTOR WAFERS FROM A REACTION GAS WHICH PRECIPITATES THE MATERIAL. THE WAFERS ARE HEATED BY THE REACTION CHAMBER WALL, COMPRISED OF HIGHLY PURE QUARTZ OR SIMILAR MATERIAL. THE METHOD IS CHARACTERIZED IN THAT THE REACTION GAS WHICH IS INTRODUCED INTO THE REACTION CHAMBER FRESH AND HAVING A TEMPERATURE OF AT LEAST 100*C. BELOW THE SEMICONDUCTOR WAFERS TO BE COATED, IS DIRECTED BY AT LEAST ONE IMPEDIMENT POSITIONED ALONG ITS PATH TOWARD THE SEMICONDUCTOR WAFERS TO BE COATED, RADIALLY TOWARD THE WALL OF THE REACTION CHAMBER WHICH HAS A TEMPERATURE OF AT MOST 53*C. BELOW THE TEMPERATURE OF THE SEMICONDUCTOR WAFERS TO BE COATED AND THEN PASSES QUICKLY TO THE SEMICONDUCTOR WAFERS WHICH ARE LOCATED AT A DISTANCE BEHIND SAID IMPEDIMENT, THAT IN SPITE OF THE NOW HIGH TEMPERATURES OF THE REACTION GAS, PRECIPITATION TAKES PLACE ONLY AT THE LOCATION OF THE SEIMCONDUCTOR WAFERS.

Inventors

• 👤 Erich Pammer
• 👤 Helmuth Kirschner

Bibliographic Details