Method of making a semiconductor device

Claim 1

A method for manufacturing a semiconductor device which comprises the steps of: fabricating a semiconductor element having substantially parallel first and second principal surfaces, said element being provided with at least one conducting layer covering a portion of each of said principal surfaces; fabricating at least a first and a second sheet electrode structure, each of said electrode structures containing a connecting means to connect said electrode structures to the corresponding conducting layer of said semiconductor element, at least one lead joined to and extending from said connecting means and a means for supporting said lead joined to said lead; disposing said conducting layer on the first principal surface of the semiconductor element so as to contact said connecting means of the first electrode structure; disposing the connecting means of the second electrode structure so as to contact the conducting layer on the second principal surface of said semiconductor element by fixing said first and second electrode structures at the supporting means; and connecting each of said conducting layers of said semiconductor element to the corresponding connecting means of said first and second electrode structures.

Claim 2

A method for manufacturing a semiconductor device which comprises the steps of: fabricating a semiconductor element having substantially parallel first and second principal surfaces, said element being provided with at least one conducting layer covering a portion of each of said principal surfaces; fabricating at least a first and a second sheet electrode structure, each of said electrode structures containing a connecting means to connect said electrode structures to the corresponding conducting layer of said semiconductor element, at least one lead joined to and extending from said connecting means and a means for supporting said lead joined to said lead; disposing said conducting layer on the first principal surface of the semiconductor element so as to contact said connecting means of the first electrode structure; disposing the connecting means of the second electrode structure so as to contact the conducting layer on the second principal surface of said semiconductor element by fixing said first and second electrode structures at the supporting means; and connecting each of said conducting layers of said semiconductor element to the corresponding connecting means of said first and second electrode structures.

Claim 6

A method for manufacturing a semiconductor device comprising: fabricating a first electrode struCture by forming a plurality of holes in a first band-shaped conducting sheet material so as to leave a plurality of elongated portions extending in a direction substantially perpendicular to the elongated direction of said first band-shaped conducting sheet material and equally spaced from and lying parallel to each other and a pair of side portions interposing said plurality of elongated portions and extending substantially parallel to the elongated direction of said band-shaped conducting sheet material; fabricating a second electrode structure by forming a hole in a second band-shaped conducting sheet material so as to leave a pair of second side portions extending in a direction substantially parallel to the elongated direction of said second band-shaped conducting sheet material and a plurality of first finger portions extending from one of said second side portions into the space between said second side portions and being equally spaced from and parallel to each other, and a plurality of second finger portions extending from the other of said second side portions into the space between said second side portions; wherein said plurality of elongated portions of said first electrode structure serve as said connecting means and as said lead and said side portions serve as said support member; and wherein said plurality of first and second finger portions of said second electrode structure serve as said connecting means at the free end thereof and as the lead, and said pair of second side portions serve as said support members; fabricating a semiconductor element having a first and second substantially parallel principal surfaces with a conducting layer on said first principal surface and two conducting layers on said second principal surface, each of said conducting layers covering only a portion of said surfaces; disposing the conducting layer on the first principal surface so as to be in contact with the connecting means of said first electrode structure; disposing said connecting means of said second electrode structure so as each of said connecting means contacts a different conducting layer on said second principal surface; connecting each of said conducting layers of said semiconductor element to the corresponding connecting means of said first and second electrode structure.

Claim 7

A method for manufacturing a semiconductor device comprising: fabricating a first electrode struCture by forming a plurality of holes in a first band-shaped conducting sheet material so as to leave a plurality of elongated portions extending in a direction substantially perpendicular to the elongated direction of said first band-shaped conducting sheet material and equally spaced from and lying parallel to each other and a pair of side portions interposing said plurality of elongated portions and extending substantially parallel to the elongated direction of said band-shaped conducting sheet material; fabricating a second electrode structure by forming a hole in a second band-shaped conducting sheet material so as to leave a pair of second side portions extending in a direction substantially parallel to the elongated direction of said second band-shaped conducting sheet material and a plurality of first finger portions extending from one of said second side portions into the space between said second side portions and being equally spaced from and parallel to each other, and a plurality of second finger portions extending from the other of said second side portions into the space between said second side portions; wherein said plurality of elongated portions of said first electrode structure serve as said connecting means and as said lead and said side portions serve as said support member; and wherein said plurality of first and second finger portions of said second electrode structure serve as said connecting means at the free end thereof and as the lead, and said pair of second side portions serve as said support members; fabricating a semiconductor element having a first and second substantially parallel principal surfaces with a conducting layer on said first principal surface and two conducting layers on said second principal surface, each of said conducting layers covering only a portion of said surfaces; disposing the conducting layer on the first principal surface so as to be in contact with the connecting means of said first electrode structure; disposing said connecting means of said second electrode structure so as each of said connecting means contacts a different conducting layer on said second principal surface; connecting each of said conducting layers of said semiconductor element to the corresponding connecting means of said first and second electrode structure.

Claim 8

A method of manufacturing a semiconductor device which comprises: disposing a semiconductor element, having substantially parallel first and second principal surfaces with at least one conducting layer covering a portion of each of said principal surfaces, on a first electrode structure, said structure comprising a connecting means to connect said electrode structure to one of said conducting layers on said semiconductor element, at least one lead joined to and extending from said connecting means and a support member branching from said lead for supporting said lead, so that the conducting layer on the first principal surface of the semiconductor element contacts said connecting means on said first electrode structure; disposing a second electrode structure, having at least one connecting means to connect said electrode structure to one of said conducting layers on said semiconductor element, at least one outgoing lead joined to and extending from said connecting means, and a support member branching from said lead for supporting said lead, so as to contact said connecting means with the conducting layer on said second principal surface of said semiconductor element; and connecting each of said conducting layers of said semiconductor element firmly to the corresponding connecting means of said first and second electrode structures.

Claim 9

A method of manufacturing a semiconductor device which comprises: disposing a semiconductor element, having substantially parallel first and second principal surfaces with at least one conducting layer covering a portion of each of said principal surfaces, on a first electrode structure, said structure comprising a connecting means to connect said electrode structure to one of said conducting layers on said semiconductor element, at least one lead joined to and extending from said connecting means and a support member branching from said lead for supporting said lead, so that the conducting layer on the first principal surface of the semiconductor element contacts said connecting means on said first electrode structure; disposing a second electrode structure, having at least one connecting means to connect said electrode structure to one of said conducting layers on said semiconductor element, at least one outgoing lead joined to and extending from said connecting means, and a support member branching from said lead for supporting said lead, so as to contact said connecting means with the conducting layer on said second principal surface of said semiconductor element; and connecting each of said conducting layers of said semiconductor element firmly to the corresponding connecting means of said first and second electrode structures.

Claim 10

A method of assembly of a transistor structure, comprising the steps of: forming a collector lead having a support member by punching a first metal sheet; punching a second metal sheet to form branch parts to be used as emitter and base leads; fabricating a transistor structure wherein a cOllector electrode is formed on a first principal surface and emitter and base electrodes are formed on a second principal surface opposite to said principal surface; positioning said collector electrode of said transistor substantially at the center of said collector lead; bending the free end portions of said emitter and base leads; superimposing and fixing said second metal sheet on said first metal sheet so that the bent free end portions of said emitter and base leads contact the corresponding emitter and base electrodes of said transistor structure; connecting each of said electrodes and the leads of said metal sheets; covering said transistor, each part of said two metal sheets connected to the electrodes of the transistor and the vicinity thereof with an insulating material, thus forming the same into one body; separating the leads from said first and second metal sheets and thereby providing a transistor structure which comprises said collector, base and emitter leads connected to the corresponding electrodes of the emitter, base and collector electrodes of said transistor and extending therefrom, and which is sealed airtightly with said insulating material.

Claim 11

A method of assembly of a transistor structure, comprising the steps of: forming a collector lead having a support member by punching a first metal sheet; punching a second metal sheet to form branch parts to be used as emitter and base leads; fabricating a transistor structure wherein a cOllector electrode is formed on a first principal surface and emitter and base electrodes are formed on a second principal surface opposite to said principal surface; positioning said collector electrode of said transistor substantially at the center of said collector lead; bending the free end portions of said emitter and base leads; superimposing and fixing said second metal sheet on said first metal sheet so that the bent free end portions of said emitter and base leads contact the corresponding emitter and base electrodes of said transistor structure; connecting each of said electrodes and the leads of said metal sheets; covering said transistor, each part of said two metal sheets connected to the electrodes of the transistor and the vicinity thereof with an insulating material, thus forming the same into one body; separating the leads from said first and second metal sheets and thereby providing a transistor structure which comprises said collector, base and emitter leads connected to the corresponding electrodes of the emitter, base and collector electrodes of said transistor and extending therefrom, and which is sealed airtightly with said insulating material.

Claim 12

A method of manufacturing semiconductor devices, comprising the steps of: fabricating a first metal plate including a pair of opposed strips and a plurality of first lead portions each bridging said pair of opposed strips; mounting a semiconductor element on each of said first lead portions, said element including at least two electrodes formed on a first major surface opposed to a second major surface and second major surface facing the corresponding first lead portion; fabricating a second metal plate including a pair of opposed strips corresponding to the pair of opposed strips of said first metal plate, a plurality of second lead portions each corresponding to one of said two electrodes of the respective element and branched from one of the opposed strips of the second metal plate, and a plurality of third lead portions each corresponding to the other of said two electrodes of the respective element and branched from the other of the opposed strips of the second metal plate; disposing said second metal plate on said first metal plate having said elements thereon so that the free end portion of each of said second and third lead portions contact the corresponding electrode on the semiconductor element and so that the strips of said second metal plate are superimposed on said first metal plate; connecting the second major surface and the two electrodes of each of said semiconductor elements with the corresponding first, second and third lead portions, respectively; covering each of the combination of the semiconductor element, the parts of the lead portions connected to the semiconductor element and the vicinity thereof with organic resinous material to form a unitary body; and separating the lead portions from said opposed strips of said first and second metal plates.

Claim 13

A method of manufacturing semiconductor devices, comprising the steps of: fabricating a first metal plate including a pair of opposed strips and a plurality of first lead portions each bridging said pair of opposed strips; mounting a semiconductor element on each of said first lead portions, said element including at least two electrodes formed on a first major surface opposed to a second major surface and second major surface facing the corresponding first lead portion; fabricating a second metal plate including a pair of opposed strips corresponding to the pair of opposed strips of said first metal plate, a plurality of second lead portions each corresponding to one of said two electrodes of the respective element and branched from one of the opposed strips of the second metal plate, and a plurality of third lead portions each corresponding to the other of said two electrodes of the respective element and branched from the other of the opposed strips of the second metal plate; disposing said second metal plate on said first metal plate having said elements thereon so that the free end portion of each of said second and third lead portions contact the corresponding electrode on the semiconductor element and so that the strips of said second metal plate are superimposed on said first metal plate; connecting the second major surface and the two electrodes of each of said semiconductor elements with the corresponding first, second and third lead portions, respectively; covering each of the combination of the semiconductor element, the parts of the lead portions connected to the semiconductor element and the vicinity thereof with organic resinous material to form a unitary body; and separating the lead portions from said opposed strips of said first and second metal plates.