US3577125A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic electronic switching network having variable voltage levels
Assignee: TDK Micronas GmbH
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Filing: 1968-10-16
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Granted: 1971-05-04
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Expires: 1988-10-16
Abstract
Abstract The invention relates to a solid state switching matrix, a plurality of which may be cascaded to provide a switching network. Various means are disclosed for controlling the amount of energy required to fire a diode in one matrix and the amount of energy passing through the diode after it has fired. By the selection of proper characteristics, the diodes in each state may be made to fire on less energy than was required to fire the diodes in the next preceding state. This way, the diodes may be made to scan idle points in the network without causing offensive levels of fan-out current to build up.
Inventors
- 👤 Jack G Frisbie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:55
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/74; H03K17/76; H04; H04Q; H04Q3/00; H04Q3/42; H04Q3/52; H04Q3/521; H10; H10D; H10D84/00; H10D84/60; H10D84/676
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
105 words
An electronic switching network comprising a plurality of cascaded switching stages, each of said stages having a number of crosspoints, means at each crosspoint operative to complete a path therethrough, the crosspoint operating means in each stage having been selected as possessing operating characteristics responsive to a voltage level which is lower than the voltage level required to operate crosspoint operating means in the next preceding stage, and means responsive to the operation of any crosspoint operating means for transferring energy to the next stage at a voltage level which is required to operate a limited number of the crosspoint operating means in that stage.
Claim 2
Dependent Claim
105 words
An electronic switching network comprising a plurality of cascaded switching stages, each of said stages having a number of crosspoints, means at each crosspoint operative to complete a path therethrough, the crosspoint operating means in each stage having been selected as possessing operating characteristics responsive to a voltage level which is lower than the voltage level required to operate crosspoint operating means in the next preceding stage, and means responsive to the operation of any crosspoint operating means for transferring energy to the next stage at a voltage level which is required to operate a limited number of the crosspoint operating means in that stage.
Claim 3
Dependent Claim
29 words
The network of claim 1 wherein said crosspoints operating means operate and remain operative for a period of time fixed by the voltage level at which the crosspoint operates.
Claim 4
Dependent Claim
47 words
The network of claim 1 wherein the crosspoint operating means comprise semiconductor devices having two emitter-base junctions, and wherein relative efficiencies of the two emitter-base junctions determine the opErating characteristics, and further including means controlled by said relative efficiencies for limiting the current flowing through said crosspoints.
Claim 5
Dependent Claim
51 words
The network of claim 1 wherein said crosspoints operating means comprise semiconductor devices having a plurality of anodes, one of said anodes being associated with a PNPN layer diffused in said semiconductor device, and another of said anodes being associated with a zener diode diffused within one of the PNPN layers.
Claim 6
Dependent Claim
74 words
The network of claim 1 wherein said crosspoint operating means comprise a plurality of multilayer devices diffused in a semiconductor material, and including a plurality of interconnection wires running between corresponding layers on said operating means for connecting them in multiples, the interconnections between each stage having predetermined resistance and capacitance characteristics to establish predetermined selected interstage time constants and the predetermined selected rise time of voltages applied from one stage to the next.
Claim 7
Dependent Claim
79 words
A switching network comprising a plurality of cascaded stages of monolithic matrices, each matrix including a plurality of integrated circuit crosspoint devices therein, means for operating crosspoint devices for transmitting energy in a path through said stages in a step manner, the devices in a stage transmissive of energy therethrough in a lesser amount than the energy transmitted thereto, for restricting the number of crosspoint devices which can operate by restricting the available energy level to the successive stage.
Claim 8
Dependent Claim
79 words
A switching network comprising a plurality of cascaded stages of monolithic matrices, each matrix including a plurality of integrated circuit crosspoint devices therein, means for operating crosspoint devices for transmitting energy in a path through said stages in a step manner, the devices in a stage transmissive of energy therethrough in a lesser amount than the energy transmitted thereto, for restricting the number of crosspoint devices which can operate by restricting the available energy level to the successive stage.
Claim 9
Dependent Claim
48 words
The network of claim 6 wherein said restricted number is selected to enable an operated crosspoint device in any stage to scan a few possible paths through crosspoint devices in each succeeding stage without enabling an undue number of crosspoint devices to operate simultaneously in such succeeding stages.
Claim 10
Dependent Claim
96 words
The network of claim 6 wherein each monolithic matrix comprises a substrate having a boundary layer thereon, semiconductive material above said boundary layer, the resistivity of said material reducing in a smooth gradient from a relatively high level at said boundary layer to a relatively low level at the surface of said matrix, and means for diffusing layers of crosspoint devices of different stages at different depths in said material whereby the efficiencies of junctions of said layers are controlled by the resistivity of the semiconductor materials at the depths to which said layers are diffused.
Claim 11
Dependent Claim
30 words
The network of claim 8 wherein the thickness of certain of said layers is selected to further control the efficiency of said junctions at predetermined depths in said semiconductive material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-03 | 1974-11-02 | 1975-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-03 | 1978-11-02 | 1979-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-03 | 1982-11-02 | 1983-05-04 | $7700.00 | Window Closed / Lapsed |