US3577044A
Expired / Lapsed
US
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Integrated semiconductor devices and fabrication methods therefor
Assignee: International Business Machines Corp
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Filing: 1968-04-08
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Granted: 1971-05-04
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Expires: 1988-04-08
Abstract
Abstract This invention is directed generally to integrated semiconductor devices including fabrication methods therefor and, more particularly, to insulator encapsulated, dielectrically isolated, integrated semiconductor devices including fabrication methods therefor.
Inventors
- 👤 William J Armstrong
- 👤 Albert M Healy
- 👤 Michael C Duffy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:00
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/061; H10W10/10; H10W10/181; H10W74/00; H10W74/40; H10W74/43; H10P90/1914; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/085
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
44 words
An integrated semiconductor structure comprising, in combination: a polycrystalline semiconductor support member; a glass insulating layer bonded to said polycrystalline support member; an oxide layer bonded to said glass layer; and a plurality of encapsulated, dielectrically isolated, semiconductor devices located on said oxide layer.
Claim 2
Dependent Claim
44 words
An integrated semiconductor structure comprising, in combination: a polycrystalline semiconductor support member; a glass insulating layer bonded to said polycrystalline support member; an oxide layer bonded to said glass layer; and a plurality of encapsulated, dielectrically isolated, semiconductor devices located on said oxide layer.
Claim 3
Dependent Claim
59 words
An integrated semiconductor structure in accordance with claim 1, in which said polycrystalline semiconductor support member being silicon, said oxide layer being silicon dioxide, and said semiconductor devices being of silicon semiconductor material, the thermal coefficients of expansion of said polycrystalline silicon support member, said glass layer, and said silicon semiconductor material of said devices being substantially the same.
Claim 4
Dependent Claim
25 words
An integrated semiconductor structure in accordance with claim 2, in which a layer of silicon dioxide completely encapsulates each of said plurality of semiconductor devices.
Claim 5
Dependent Claim
30 words
An integrated semiconductor structure in accordance with claim 3, in which a glass layer overcoats the portion of said oxide layer located on the surface of the monocrystalline semiconductor devices.
Claim 6
Dependent Claim
22 words
An integrated sEmiconductor structure in accordance with claim 4, in which said overcoat glass layer consists of a P2O5 .SiO2 glass composition.
Claim 7
Dependent Claim
60 words
An integrated semiconductor device structure in accordance with claim 4, in which each of said plurality of semiconductor devices being separated from the others by isolation moats, said glass layer bonded to said polycrystalline member consisting of by weight percent 82.8 percent of SiO2, 11.4 percent of B2O3, 5.3 percent of A12O3 and trace amounts of both Na2O and ZrO2.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-03 | 1974-11-02 | 1975-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-03 | 1978-11-02 | 1979-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-03 | 1982-11-02 | 1983-05-04 | $7700.00 | Window Closed / Lapsed |