Semiconductor devices

Claim 2

A master semiconductor device from which any one of a wide variety of different integrated electronic circuits may be formed comprising: a. a wafer of monocrystalline silicon, b. a first plurality of each of a wide variety of diverse semiconductor components formed adjacent to a first area of a major face of the wafer by alternate diffused layers of opposite conductivity types, each of the components having at least two regions defining electrodes of the component exposed at the major face, the components being laterally spaced from one another in a first regular pattern and isolated by PN junctions, c. a second like plurality of each of a variety of diverse semiconductor components formed adjacent a different area of said major face of the wafer by alternate diffused layers of opposite conductivity types, each of the components of said second plurality having at least two regions defining electrodes of the component exposed at the major face, the components of said second plurality being laterally spaced from one another in a regular pattern substantially the same as said first regular pattern and isolated by PN junctions, d. a coating of silicon oxide on the major face covering said first area of the surface thereof and said different area of the surface thereof, except at exposed areas overlying said electrode regions, e. first thin film pattern of aluminum on said major face overlying the silicon oxide covering said first area and ohmically contacting each of the electrode regions of said first plurality of components and forming a first electronic circuit, and f. a second thin film pattern of aluminum on said major face overlying the silicon oxide type covering said different area and ohmically contacting each of the electrode regions of said second plurality of components and forming a different electronic circuit.

Claim 3

A master semiconductor device according to claim 3 wherein the semiconductor components include transistors, diodes, resistors, and capacitors, all of which are planar in form and have PN junctions extending to said major face underneath said silicon oxide.

Claim 4

A plurality of different electronic circuits on a common semiconductor substrate comprising: a. a semiconductor substrate, b. a first plurality of circuit components formed adjacent to a first area of a major face of said semiconductor substrate, at least some of said circuit components of said first plurality including semiconductor portions of said substrate having conductivity types opposite that of subjacent semiconductor material, said circuit components of said first plurality arranged with respect to one another in a predetermined pattern at said first area and isolated from one another through the semiconductor material, c. a second like plurality of circuit elements formed adjacent a different area of said major face of said substrate, at least some of said circuit elements of said second plurality including semiconductor portions of said substrate having conductivity types opposite that of subjacent semiconductor material, said circuit components of said second plurality being arranged with respect to one another at said different area in substantially the same predetermined pattern as said first plurality of circuit components and being isolated from one another through the semiconductor material, d. insulating material on said major face of said substrate covering said first area and said different area except at exposed contact areas overlying electrode regions of said circuit components, e. a first pattern of conductors on said insulating material covering said first area and ohmically connecting to the circuit components of said first plurality at said contact areas in said first area to form a first electronic circuit, and f. a different pattern of conductors on said insulating material covering said different area and ohmically connecting to the circuit components of said second plurality at said contact areas in said different area to form a different electronic circuit.

Claim 5

A semiconductor structure comprising a semiconductor substrate, a plurality of substantially identical spaced units on one surface of said substrate, each unit comprising a number of circuit elements for providing active and passive circuit element functions sufficient to form different circuit functions, insulating material on said one surface of said substrate exposing contact areas for interconnecting the circuit elements of each unit, conductive material on said insulating material interconnecting the circuit elements of one unit to form a circuit function and interconnecting the circuit elements of another unit to form a different circuit function.

Claim 6

A structure according to claim 6, wherein said circuit elements of a unit comprise transistors and diffused resistors.

Claim 7

A structure according to claim 6, wherein said circuit elements of a unit comprise transistors, diffused resistors and diodes.

Claim 8

A structure according to claim 6, wherein said circuit elements of a unit comprise transistors, diffused resistors, diodes and capacitors.