US3577018A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High-speed logic device employing a gunn-effect element and a semiconductor laser element
Assignee: NEC Corp
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Filing: 1969-03-13
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Granted: 1971-05-04
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Expires: 1989-03-13
Abstract
Abstract A semiconductor device is described wherein a Gunn effect element is placed in series with the PN junction of a semiconductor laser. A bias potential is applied across the series connection to forwardly bias the PN junction and normally produce lasing action from the laser element. The bias potential is further selected so that current reductions produced by high electric field layers traveling within the Gunn element effectively suppress lasing actions. Several embodiments are shown.
Inventors
- 👤 Toshio Wada
- 👤 Yasuo Matsukura
- 👤 Kuniichi Ohta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:48
CPC Classifications
G; G02; G02F; G02F3/00; H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0261; H01S5/06; H01S5/062; H01S5/06209; H01S5/06216; H01S5/30; H01S5/32; H03; H03K; H03K3/00; H03K3/02; H03K3/313
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
41 words
The device as recited in claim 1 wherein the semiconductor element is formed of a semiconductor material of a first conductivity type and wherein the laser element includes a PN junction, with said semiconductor element forming a part of the junction.
Claim 2
Dependent Claim
45 words
The device as recited in claim 1 wherein the semiconductor element has a section of effective varying impedance to provide a varying electric field intensity between the ends thereof to vary the suppression of lasing action in correspondence with the varying lifetime of high-field layers.
Claim 3
Dependent Claim
31 words
The device as recited in claim 3 wherein the high-field layer supporting semiconductor element is provided with a tapered region of varyinG cross section to vary the lifetime of high-field layers.
Claim 4
Dependent Claim
42 words
The device as recited in claim 1 and further including a trigger electrode coupled to the semiconductor element through the insulation film or the rectifying layer between the ends thereof to control initiation of high electric field layers within the semiconductor element.
Claim 5
Dependent Claim
65 words
The device as recited in claim 5 and further including: a second semiconductor element made of a material capable of supporting a high electric field layer travelling between the ends thereof at a preselected repetition rate, and an intermediate output electrode located on the second semiconductor element between the ends thereof to couple the high-field layer in the second semiconductor element to the triggering electrode.
Claim 6
Dependent Claim
31 words
The device as recited in claim 6 wherein the second semiconductor element is sized to provide high-field layers at intervals less than the lifetime of a high-field layer supporting semiconductor element.
Claim 7
Dependent Claim
41 words
The device as recited in claim 1 and further including amplifying semiconductor laser having a PN lasing junction in optical coupling relationship with the first laser element and connected in parallel with the series connected semiconductor element and first lasing element.
Claim 8
Dependent Claim
49 words
The device as recited in claim 1 and further including means responsive to the lasing action from the laser element for feeding the lasing action back to the high-field layer supporting element with an intensity sufficient to photon conductively initiate a high-field layer therein and terminate the lasing action.
Claim 9
Dependent Claim
43 words
The device as recited in claim 1 and further including a second semiconductor laser element placed generally transversely to the laser radiation from the first laser element to suppress lasing from the second laser element in response to lasing from the first element.
Claim 10
Dependent Claim
61 words
The device as recited in claim 10 wherein the first laser element is placed generally parallel with the second laser element, and wherein the first laser element includes a first resonator having a pair of facing reflectors with one reflector placed on the first laser element and the second reflector on the second element with the second laser element placed therebetween.
Claim 11
Dependent Claim
127 words
The device as recited in claim 11 and further including: a third semiconductor laser element placed generally parallel with the first and second laser elements with the second laser element between the first and third laser elements, said third laser element having a resonator including a pair of reflectors with one reflector placed on the third element and the second reflector on the second element with the second laser element placed therebetween, said third laser element including a second PN junction. a second semiconductor element made of a material capable of supporting a high electric field layer between the ends and placed in series relationship with the PN junction of the third laser element for lasing action control by high-field layers formed within the second semiconductor element.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-03 | 1974-11-02 | 1975-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-03 | 1978-11-02 | 1979-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-03 | 1982-11-02 | 1983-05-04 | $7700.00 | Window Closed / Lapsed |