Repair of thin-film structure such as cryoelectric memory

Claim 2

In a thin-film structure having an insulating substrate, conductors and insulation on the substrate and a final layer spaced from the substrate which includes a thin-film conductor, the improvement comprising: a plurality of spaced, conductive riser columns extending between the substrate and said thin-film conductor of said final layer, said columns being insulated from all conductors of the thin-film structure except said thin-film conductor of said final layer.

Claim 3

In the thin-film structure as set forth in claim 1, said final layer thin-film conductor having an open therein between two of said riser columns; and further including means for repairing said open comprising a conductor conductively connected between said riser columns.

Claim 4

In a cryoelectric memory plane having an insulating substrate, a conductive ground plane on the substrate and alternate layers of insulation and conductors over the ground plane and a final layer spaced from the ground plane which includes a thin-film conductor, the improvement comprising: said ground plane formed with spaced openings therein; and a plurality of spaced, conductive riser columns extending through said openings in said ground plane between the substrate and said thin-film conductor of said final layer, said columns being insulated from all conductors of the thin-film structure except said thin-film conductor of said final layer.

Claim 5

In a cryoelectric memory plane having an insulating substrate, a conductive ground plane on the substrate and alternate layers of insulation and conductors over the ground plane and a final layer spaced from the ground plane which includes a thin-film conductor, the improvement comprising: said ground plane formed with spaced openings therein; and a plurality of spaced, conductive riser columns extending through said openings in said ground plane between the substrate and said thin-film conductor of said final layer, said columns being insulated from all conductors of the thin-film structure except said thin-film conductor of said final layer.

Claim 6

In a cryoelectric memory plane as set forth in claim 3, said thin-film conductor of said final layer being formed with a break therein and further including means which repair said break comprising a conductor secured between lead to riser columns, one on each side of said break.

Claim 7

In a cryoelectric memory which includes an insulator substrate, a ground plane on the substrate, and drive lines insulated from and lying over the ground plane, an improved drive line layout comprising: a plurality of drive lines lying on an insulating layer, each such drive line entering and leaving the region of the insulating layer over the ground plane at relatively closely spaced points, each such drive line comprising two portions, one the mirror image of the other, one for carrying current onto the ground plane and each drive line portion taking a meandering path which alternately approaches and becomes further spaced from the mirror image portion of the same line.

Claim 8

In a cryoelectric memory which includes an insulator substrate, a ground plane on the substrate, and drive lines insulated from and lying over the ground plane, an improved drive line layout comprising: a plurality of drive lines lying on an insulating layer, each such drive line entering and leaving the region of the insulating layer over the ground plane at relatively closely spaced points, each such drive line comprising two portions, one the mirror image of the other, one for carrying current onto the ground plane and each drive line portion taking a meandering path which alternately approaches and becomes further spaced from the mirror image portion of the same line.

Claim 9

In a cryoelectric memory as set forth in claim 5, said drive line portions lying side-by-side and being substantially equidistant from one another throughout their length.

Claim 10

In a cryoelectric memory as set forth in claim 6, each drive line portion being spaced from the next adjacent drive line portion by a distance comparable to the width of the drive line.

Claim 11

In a cryoelectric memory as set forth in claim 5, further including a plurality of spaced conductive riser columns extending through openings in said ground plane between the substrate and the two portIons of each drive line, said columns being insulated from all conductors of said memory except for said drive line portions, the spaced conductors for each drive line portion being symmetric with the spaced conductors for the mirror image portion of said drive line.

Claim 12

In a cryoelectric memory as set forth in claim 5, said drive lines being arranged in pairs.

Claim 13

In a cryoelectric memory as set forth in claim 8, at least some of said riser columns being located at the portions of one of said drive lines which are spaced furthest apart from one another.