US3573974A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating ohmic contacts and conductive connectors
Assignee: International Business Machines Corp
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Filing: 1968-03-21
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Granted: 1971-04-06
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Expires: 1988-03-21
Abstract
Abstract A METHOD FOR FORMING ALUMINUM OHMIC CONTACTS AND CONDUCTIVE CONNECTORS ON SEMICONDUCTOR DEVICES HAVING SILICON DIOXIDE PASSIVATING MASKS COVERING PORTIONS OF A SEMICONDUCTOR SUBSTRATE. THE ALUMINUM CONTACTS AND CONNECTORS ARE FORMED BY THE DISPROPORTIONATION OF ALUMINUM MONO-HALIDE VAPOR IN THE PRESENCE OF THE SILICON DIOXIDE MASKED SUBSTRATE. THE ALUMINUM FORMED BY THE DISPROPORTIONATION IS DEPOSITED AS A LAYER OVER THE MASKED SUBSTRATE. THEN, PORTIONS OF THE ALUMINUM LAYER ARE SELECTIVELY REMOVED TO LEAVE A PATTERN OHMIC CONTACTS AND CONDUCTIVE CONNECTORS.
Inventors
- 👤 Paul P Castrucci
- 👤 Edward G Grochowski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:53
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/12; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S438/00; Y10S438/913
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-05 | 1974-10-05 | 1975-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-05 | 1978-10-05 | 1979-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-05 | 1982-10-05 | 1983-04-06 | $7700.00 | Window Closed / Lapsed |