US3573750A
Expired / Lapsed
US
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High-speed memory system
Assignee: NEC Corp
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Filing: 1969-04-01
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Granted: 1971-04-06
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Expires: 1989-04-01
Abstract
Abstract High-speed memory apparatus for use in a data processing system is provided in accordance with the present invention wherein the access experience of the information stored therein may be monitored and the address of the information having the least access experience determined so that new information may be substituted therefor. According to one embodiment of this invention, the high-speed memory apparatus includes a wordorganized storage array having at least one monitoring storage element associated with each word therein. Each such monitoring storage element is coupled to means for rendering the magnetic state of said at least one monitoring storage element representative of the access experience of the word associated therewith. Additionally, means are provided for sensing the magnetic condition of each such monitoring storage element. Accordingly, the address of the word having the least access experience may be determined and new word information substituted therefor in the storage array.
Inventors
- 👤 Takashi Ishidate
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:17
CPC Classifications
G; G06; G06F; G06F12/00; G06F12/02; G06F12/08; G06F12/12; G06F12/121; G06F12/122
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
406 words
In a data processing system including high-speed memory apparatus, low-speed memory apparatus and means adapted to transfer designated information at least therebetween, the improvement in said high-speed memory apparatus comprising: at least one memory storage array including a plurality of column conductors and a plurality of row conductors intersecting said plurality of column conductors, said at least one memory storage array further including a plurality of first magnetic storage elements disposed at certain of the intersections of said plurality of column and row conductors in a manner such that at least one of said plurality of first magnetic storage elements is disposed at each of said certain of said intersections and a plurality of second magnetic storage elements disposed at other intersections of said plurality of column and row conductors in a manner such that at least one of said plurality of second magnetic storage elements is disposed at each of said other intersections, said plurality of second magnetic storage elements being arranged in said storage array so that each of said plurality of second magnetic storage elements is associated with selected ones of said plurality of first magnetic storage elements; means for writing information into said plurality of first magnetic storage elements, said writing means being operatively connected to each of the row and column conductors having intersections associated with said first magnetic storage elements; means adapted to apply readout pulses to said plurality of first and second magnetic storage elements, said means adapted to apply readout pulses to said plurality of first and second magnetic storage elements being operatively connected to first conductors of said plurality of row and column conductors having intersections associated with said first and second magnetic storage elements; pulse generator means adapted to apply monitoring pulses to said plurality of second magnetic storage elements, said pulse generator means being operatively connected to second conductors of said plurality of row and column conductors having intersections associate with said second magnetic storage elements, said monitoring pulses being adapted to render the magnetic state of said second magnetic storage elements representative of the access experience of said selected ones of said plurality of first magnetic storage elements associated therewith; and means for sensing the magnetic condition of each of said plurality of second magnetic storage elements upon the application of a readout pulse thereto, whereby the access experience of each group of said selected ones of said first magnetic storage elements is available.
Claim 2
Dependent Claim
406 words
In a data processing system including high-speed memory apparatus, low-speed memory apparatus and means adapted to transfer designated information at least therebetween, the improvement in said high-speed memory apparatus comprising: at least one memory storage array including a plurality of column conductors and a plurality of row conductors intersecting said plurality of column conductors, said at least one memory storage array further including a plurality of first magnetic storage elements disposed at certain of the intersections of said plurality of column and row conductors in a manner such that at least one of said plurality of first magnetic storage elements is disposed at each of said certain of said intersections and a plurality of second magnetic storage elements disposed at other intersections of said plurality of column and row conductors in a manner such that at least one of said plurality of second magnetic storage elements is disposed at each of said other intersections, said plurality of second magnetic storage elements being arranged in said storage array so that each of said plurality of second magnetic storage elements is associated with selected ones of said plurality of first magnetic storage elements; means for writing information into said plurality of first magnetic storage elements, said writing means being operatively connected to each of the row and column conductors having intersections associated with said first magnetic storage elements; means adapted to apply readout pulses to said plurality of first and second magnetic storage elements, said means adapted to apply readout pulses to said plurality of first and second magnetic storage elements being operatively connected to first conductors of said plurality of row and column conductors having intersections associated with said first and second magnetic storage elements; pulse generator means adapted to apply monitoring pulses to said plurality of second magnetic storage elements, said pulse generator means being operatively connected to second conductors of said plurality of row and column conductors having intersections associate with said second magnetic storage elements, said monitoring pulses being adapted to render the magnetic state of said second magnetic storage elements representative of the access experience of said selected ones of said plurality of first magnetic storage elements associated therewith; and means for sensing the magnetic condition of each of said plurality of second magnetic storage elements upon the application of a readout pulse thereto, whereby the access experience of each group of said selected ones of said first magnetic storage elements is available.
Claim 3
Dependent Claim
50 words
The improved high-speed memory apparatus according to claim 1 wherein one of said first and second conductors of said plurality of row and column conductors includes only row conductors and the other of said first and second conductors of said plurality of row and column conductors includes only column conducTors.
Claim 4
Dependent Claim
120 words
The improved high-speed memory apparatus according to claim 2 wherein said pulse generator means includes means for applying counterpulses having a high repetition frequency to particular ones of said plurality of second magnetic storage elements, said means for applying counterpulses being operative to apply counterpulses whose magnitude is insufficient to change the magnetic condition of a second magnetic storage element from a first magnetic state to a second magnetic state in response to only a single such counterpulse but whose magnitude is sufficient to gradually change the magnetic condition of a second magnetic storage element from a first magnetic state to a second magnetic state in a stepwise manner upon the sequential application of a plurality of such counterpulses thereto.
Claim 5
Dependent Claim
58 words
The improved high-speed memory apparatus according to claim 3 wherein said pulse generator means includes means for switching the magnetic condition of each of said particular ones of said plurality of second magnetic storage elements to said first magnetic state when information is written into said selected ones of said plurality of first magnetic storage elements associated therewith.
Claim 6
Dependent Claim
211 words
The improved high-speed memory apparatus according to claim 4 wherein said pulse generator means includes means for applying a unit pulse to all of the others of said plurality of second magnetic storage elements whenever readout pulses are applied to any of said plurality of first or second magnetic storage elements, said unit pulse being of insufficient magnitude to change the magnetic condition of a second magnetic storage element in the absence of a readout pulse coincidentally applied therewith, said unit pulse being of insufficient magnitude to change the magnetic condition of a second magnetic storage element from said second magnetic state to said first magnetic state in the presence of a readout pulse coincidentally applied therewith, and said unit pulse being of sufficient magnitude in the presence of a readout pulse applied therewith to gradually change the magnetic condition of a second magnetic storage element from said second magnetic state to said first magnetic state in a stepwise manner upon the sequential application of a plurality of such unit pulses in combination with readout pulses, whereby said others of said second magnetic storage elements serve to monitor how often presently stored information in said selected ones of said plurality of first magnetic storage elements associated therewith have been read out.
Claim 7
Dependent Claim
57 words
The improved high-speed memory apparatus according to claim 5 wherein said pulse generator means includes means for switching the magnetic condition of each of said others of said plurality of second magnetic storage elements to said second magnetic state when information is written into said selected ones of said plurality of first magnetic storage elements associated therewith.
Claim 8
Dependent Claim
212 words
The improved high-speed memory apparatus according to claim 2 wherein said pulse generator means includes means for applying a unit pulse to certain ones of said plurality of second magnetic storage elements whenever readout pulses are applied to any one of said plurality of first or second magnetic storage elements, said unit pulses being of insufficient magnitude to change the magnetic condition of a second magnetic storage element in the absence of a readout pulse coincidentally applied therewith, said unit pulse being of insufficient magnitude to change the magnetic condition of a second magnetic storage element from a second magnetic state to a first magnetic state in the presence of a readout pulse coincidentally applied therewith, said unit pulse being of sufficient magnitude in the presence of a readout pulse applied therewith to gradually change the magnetic condition of a second magnetic storage element from said second magnetic state to said first magnetic state in a stepwise manner upon the sequential application of a plurality of such unit pulses in combinatIon with readout pulses, whereby said certain ones of said plurality of second magnetic storage elements serve to monitor how often presently stored information in said selected ones of said plurality of first magnetic storage elements associated therewith have been read out.
Claim 9
Dependent Claim
59 words
The improved high-speed memory apparatus according to claim 7 wherein said pulse generator means includes means for switching the magnetic condition of each of said certain ones of said plurality of second magnetic storage elements to said second magnetic state when information is written into the said selected ones of said plurality of first magnetic storage elements associated therewith.
Claim 10
Dependent Claim
320 words
In a data processing system including high-speed memory apparatus, low-speed memory apparatus and means adapted to transfer designated information at least therebetween, the improvement in said high-speed memory apparatus comprising: at least one memory storage array including a plurality of bit conductors, at least one monitoring conductor arranged in parallel with said plurality of bit conductors and a plurality of word conductors intersecting said plurality of bit and monitoring conductors, said at least one memory storage array further including a plurality of first magnetic storage elements disposed at the intersections of said plurality of bit and word conductors in a manner such that at least one of said plurality of first magnetic storage elements is disposed at each intersection thereof and a plurality of second magnetic storage elements disposed at the intersections of said at least one monitoring conductor and said plurality of word conductors in a manner such that at least one of said plurality of second magnetic storage elements is disposed at each intersection thereof; bit driver means for writing information to be stored in said first magnetic storage elements connected to each of said bit conductors; word driver means for reading out and writing information into said first magnetic storage elements connected to each of said word conductors; pulse generator means adapted to apply monitoring pulses to said plurality of second magnetic storage elements, said pulse generator means being connected to said at least one monitoring conductor means, said monitoring pulses being adapted to render the magnetic state of a second magnetic storage element coupled by a given word conductor representative of the access experience of said first magnetic storage elements coupled by said given word conductors; and means for sensing the magnetic condition of each of said second magnetic storage elements linked by said monitoring conductor, whereby the access experience of each of the first magnetic storage elements coupled by a common word conductor is available.
Claim 11
Dependent Claim
320 words
In a data processing system including high-speed memory apparatus, low-speed memory apparatus and means adapted to transfer designated information at least therebetween, the improvement in said high-speed memory apparatus comprising: at least one memory storage array including a plurality of bit conductors, at least one monitoring conductor arranged in parallel with said plurality of bit conductors and a plurality of word conductors intersecting said plurality of bit and monitoring conductors, said at least one memory storage array further including a plurality of first magnetic storage elements disposed at the intersections of said plurality of bit and word conductors in a manner such that at least one of said plurality of first magnetic storage elements is disposed at each intersection thereof and a plurality of second magnetic storage elements disposed at the intersections of said at least one monitoring conductor and said plurality of word conductors in a manner such that at least one of said plurality of second magnetic storage elements is disposed at each intersection thereof; bit driver means for writing information to be stored in said first magnetic storage elements connected to each of said bit conductors; word driver means for reading out and writing information into said first magnetic storage elements connected to each of said word conductors; pulse generator means adapted to apply monitoring pulses to said plurality of second magnetic storage elements, said pulse generator means being connected to said at least one monitoring conductor means, said monitoring pulses being adapted to render the magnetic state of a second magnetic storage element coupled by a given word conductor representative of the access experience of said first magnetic storage elements coupled by said given word conductors; and means for sensing the magnetic condition of each of said second magnetic storage elements linked by said monitoring conductor, whereby the access experience of each of the first magnetic storage elements coupled by a common word conductor is available.
Claim 12
Dependent Claim
85 words
The improved high-speed memory apparatus according to claim 6 wherein said means for sensing the magnetic condition of each of said plurality of second magnetic storage elements includes first sensing means for sensing the magnetic condition of each of said particular ones of said plurality of second magnetic storage elements supplied with a plurality of counterpulses and second sensing means for sensing the magnetic condition of each of said others of said plurality of second magnetic storage elements supplied with a plurality of unit pulses.
Claim 13
Dependent Claim
86 words
The improved high-speed memory apparatus according to claim 10 further comprising means for comparing the magnetic condition of a selected one of said particular ones of said plurality of second magnetic storage elements having a plurality of counterpulses applied thereto with the magnetic condition of a correspondingly selected one of said others of said second magnetic storage elements adapted to have said unit pulses applied thereto, whereby the access experience of information stored in associated ones of said plurality of first magnetic storage elements is monitored.
Claim 14
Dependent Claim
69 words
The improved high-speed memory apparatus according to claim 11 wherein each of said particular oNes of said plurality of second magnetic storage elements are disposed along a common one of said second conductors of said plurality of row and column conductors and each of said others of said second magnetic storage elements are disposed along another one of said second conductors of said plurality of row and column conductors.
Claim 15
Dependent Claim
116 words
The improved high-speed memory apparatus according to claim 9 wherein said pulse generator means includes means for applying counterpulses having a high repetition frequency to said at least one monitoring conductor, said means for applying counterpulses being operative to apply counterpulses whose magnitude is insufficient to change the magnetic condition of a second magnetic storage element from a first magnetic state to a second magnetic state in response to only a single such counterpulse but whose magnitude is sufficient to gradually change the magnetic condition of a second magnetic storage element from a first magnetic state to a second magnetic state in a stepwise manner upon the sequential application of a plurality of such counterpulses thereto.
Claim 16
Dependent Claim
88 words
The improved high-speed memory apparatus according to claim 13 wherein said pulse generator means includes means for switching the magnetic condition of a second magnetic storage element disposed at an intersection of said at least one monitoring conductor and a given one of said plurality of word conductors to said first magnetic state whenever said word driver means acts to write information into said first magnetic storage elements disposed at the intersections of said plurality of bit conductors and said given one of said plurality of word conductors.
Claim 17
Dependent Claim
206 words
The improved high-speed memory apparatus according to claim 9 wherein said pulse generator means includes means for applying a unit pulse to said at least one monitoring conductor whenever readout pulses are applied to any one of said plurality of word conductors by said word driver means, said unit pulses being of insufficient magnitude to change the magnetic condition of a second magnetic storage element in the absence of a readout pulse coincidentally applied therewith, said unit pulse being of insufficient magnitude to change the magnetic condition of a second magnetic storage element from a second magnetic state to a first magnetic state in the presence of a readout pulse coincidentally applied therewith and said unit pulse being of sufficient magnitude in the presence of a readout pulse applied therewith to gradually change the magnetic condition of a second magnetic storage element from said second magnetic state to said first magnetic state in a stepwise manner upon the sequential application of a plurality of such unit pulses in combination with readout pulses, whereby said plurality of second magnetic storage elements serve to monitor how often presently stored information in said selected ones of said plurality of first magnetic storage elements associated therewith have been read out.
Claim 18
Dependent Claim
88 words
The improved high-speed memory apparatus according to claim 15 wherein said pulse generator means includes means for switching the magnetic condition of a second magnetic storage element disposed at an intersection of said at least one monitoring conductor and a given one of said plurality of word conductors to said second magnetic state whenever said word driver means acts to write information into said first magnetic storage elements disposed at the intersections of said plurality of bit conductors and said given one of said plurality of word conductors.
Claim 19
Dependent Claim
269 words
The improved high-speed memory apparatus according to claim 13 additionally comprising: at least a second monitoring conductor arranged in parallel with said plurality of bit conductors and intersecting each of said plurality of word conductors; a plurality of third magnetic storage elements, one of said third magnetic storage elements being disposed at each intersection of said second monitoring conductor and said plurality of word conductors; pulse-generatinG means for applying a unit pulse to said second monitoring conductor whenever readout pulses are applied to any of said plurality of word conductors by said word driver means, said unit pulse being of insufficient magnitude to change the magnetic condition of a third magnetic storage element in the absence of a readout pulse coincidentally applied therewith, said unit pulse being of insufficient magnitude to change the magnetic condition of a third magnetic storage element from a second magnetic state to a first magnetic state in the presence of a readout pulse coincidentally applied therewith, and said unit pulse being of sufficient magnitude in the presence of a readout pulse applied therewith to gradually change the magnetic condition of a third magnetic storage element from said second magnetic state to said first magnetic state in a stepwise manner upon the sequential application of a plurality of such unit pulses in combination with readout pulses, whereby said third magnetic storage elements serve to monitor how often presently stored information in said plurality of first magnetic storage elements associated therewith have been read out; and means for sensing the magnetic condition of each of said third magnetic storage elements linked by said second monitoring conductor.
Claim 20
Dependent Claim
68 words
The improved high-speed memory apparatus according to claim 17 additionally comprising means for comparing the magnetic condition of selected ones of said second and third magnetic storage elements, said means for comparing being operatively connected to both said means for sensing the magnetic condition of each of said second magnetic storage elements and said means for sensing the magnetic condition of each of said third magnetic storage elements.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-05 | 1974-10-05 | 1975-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-05 | 1978-10-05 | 1979-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-05 | 1982-10-05 | 1983-04-06 | $7700.00 | Window Closed / Lapsed |