US3571918A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuits and fabrication thereof
Assignee: Texas Instruments Inc
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Filing: 1969-03-28
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Granted: 1971-03-23
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Expires: 1989-03-28
Abstract
Abstract This specification discloses a method of forming an integrated circuit characterized by: 1. Forming on a given substrate, respectively and without the usual complex, multihandling operations; A. A FIRST BLOCK OF SEMICONDUCTOR MATERIAL, B. A SECOND BLOCK OF A REDUCIBLE DIELECTRIC MATERIAL; C. A THIRD BLOCK OF FERRITE, AND D. AN INSULATING FILM COVERING THE SUBSTRATE INTERMEDIATE THE FIRST, SECOND AND THIRD BLOCKS; 2. Forming a semiconductor device in the first block; 3. Forming a resistor in the second block; and 4. Forming a capacitor or an inductor in the third block. An electron beam below a maximum power level is employed to effect the desired depositions and components with the substrate maintained in one reaction chamber. Various vaporous, or gaseous, reactants are flowed past the substrate during the respective operations but external contamination is avoided. Specific materials, reactants, and operations are given.
Inventors
- 👤 Rolf R Haberecht
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:53
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/085; Y10S438/00; Y10S438/907
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
50 words
FORMING ON A GIVEN SUBSTANCE, RESPECTIVELY AND WITHOUT THE USUAL COMPLEX, MULTIHANDLING OPERATIONS; A. A FIRST BLOCK OF SEMICONDUCTOR MATERIAL, B. A SECOND BLOCK OF A REDUCIBLE DIELECTRIC MATERIAL; C. A THIRD BLOCK OF FERRITE, AND D. AN INSULATING FILM COVERING THE SUBSTRATE INTERMEDIATE THE FIRST, SECOND AND THIRD BLOCKS;
Claim 2
Dependent Claim
50 words
FORMING ON A GIVEN SUBSTANCE, RESPECTIVELY AND WITHOUT THE USUAL COMPLEX, MULTIHANDLING OPERATIONS; A. A FIRST BLOCK OF SEMICONDUCTOR MATERIAL, B. A SECOND BLOCK OF A REDUCIBLE DIELECTRIC MATERIAL; C. A THIRD BLOCK OF FERRITE, AND D. AN INSULATING FILM COVERING THE SUBSTRATE INTERMEDIATE THE FIRST, SECOND AND THIRD BLOCKS;
Claim 3
Dependent Claim
8 words
FORMING A SEMICONDUCTOR DEVICE IN THE FIRST BLOCK;
Claim 4
Dependent Claim
8 words
FORMING A SEMICONDUCTOR DEVICE IN THE FIRST BLOCK;
Claim 5
Dependent Claim
8 words
FORMING A RESISTOR IN THE SECOND BLOCK; AND
Claim 6
Dependent Claim
8 words
FORMING A RESISTOR IN THE SECOND BLOCK; AND
Claim 7
Dependent Claim
30 words
FORMING A CAPACITOR OR AN INDUCTOR IN THE THIRD BLOCK. AN ELECTRON BEAM BELOW A MAXIMUM POWER LEVEL IS EMPLOYED TO EFFECT THE DESIRED DEPOSITIONS AND COMPONENTS WITH THE SUB-
Claim 8
Dependent Claim
30 words
FORMING A CAPACITOR OR AN INDUCTOR IN THE THIRD BLOCK. AN ELECTRON BEAM BELOW A MAXIMUM POWER LEVEL IS EMPLOYED TO EFFECT THE DESIRED DEPOSITIONS AND COMPONENTS WITH THE SUB-
Claim 9
Dependent Claim
59 words
The method of claim 1, wherein said substrate is P-type silicon and said first block is N-type silicon formed by passing hydrogen and silicon tetrachloride with phosphorous trichloride over said first selected region which is hEated to 1200* C. by said electron beam to form in said first block a diode or a collector and base for a transistor.
Claim 10
Dependent Claim
60 words
The method of claim 2, wherein an emitter is formed in said base of N-type silicon by passing hydrogen and silicon tetrachloride with a dopant impurity inducing P-type conductivity characteristics, said dopant impurity being either boron trichloride, boron tribromide, diborane B2H4, or boric oxide B2O3, and wherein said emitter region is heated to about 1200* C. by said electron beam.
Claim 11
Dependent Claim
56 words
The method of claim 1, wherein said polycrystalline dielectric material is silicon dioxide formed by passing an oxidizing agent of oxygen or steam in contact with said silicon substrate and said electron beam heats said second selected region in which said second block is to be formed to a temperature in the range of 250*-500* C.
Claim 12
Dependent Claim
56 words
The method of claim 1, wherein said polycrystalline dielectric material is titanium dioxide formed by passing steam and titanium tetrachloride in contact with said substrate, and said substrate is heated to a temperature of greater than 200* C. by said electron beam in said second selected region in which said second block is to be formed.
Claim 13
Dependent Claim
17 words
The method of claim 1, wherein said third block of ferrite consists essentially of yttrium iron garnet.
Claim 14
Dependent Claim
31 words
The method of claim 1, wherein the power of said electron beam is kept below 30 keV. and the current supplying power to said electron beam is maintained below 1000 microamps.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-22 | 1974-09-21 | 1975-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-22 | 1978-09-21 | 1979-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-22 | 1982-09-21 | 1983-03-23 | $7700.00 | Window Closed / Lapsed |