US3571759A
Expired / Lapsed
US
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Transverse negative mobility devices
Assignee: Fairchild Semiconductor Corp
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Filing: 1968-09-06
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Granted: 1971-03-23
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Expires: 1988-09-06
Abstract
Abstract In a properly cut sample of selectively doped semiconductor material, such as germanium, with a selected bias voltage applied along the longitudinal axis, a small transverse voltage applied across one end of the sample produces a transversely polarized domain, which, under the influence of the bias voltage, drifts along the longitudinal axis of the sample. Because the drift velocity is a function of the strength of the bias voltage, and because a pulse injected into the sample can be continuously recirculated at a frequency proportional to the drift velocity, an amplitude modulated signal can be used to vary the bias voltage thereby varying the recirculation frequency of the pulse. As a result, the device can be made to act as either a frequency or a phase modulator.
Inventors
- 👤 Herbert Kroemer
- 👤 Alan H Mac Pherson
- 👤 Megha Shyam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:45
CPC Classifications
H; H03; H03H; H03H7/00; H03H7/30; G; G11; G11C; G11C27/00; H03B; H03B9/00; H03B9/12; H03C; H03C5/00; H03C7/00; H03C7/02; H10; H10N; H10N70/00; H10N70/10; H10N80/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
176 words
A frequency modulator which comprises: a body of selectively doped semiconductor substantially cut in a (110) plane with the longitudinal axis of said body corresponding within a selected number of degrees to a selected (110) axis of said material; means for producing a bias field substantially along said longitudinal axis; mans, responsive to a feedback signal, for producing a transverse domain in said body, said domain traveling along said longitudinal axis in response to said bias field; means for producing an output pulse upon the arrival of said transverse domain at a selected position in said body; means, responsive to said output pulse, for producing said feedback signal, and for transmitting said feedback signal to said means for producing said transverse domain; and means for varying the magnitude of said bias field along said longitudinal axis as a function of the amplitude of an input signal, thereby to control the time of arrival of said transverse domain at said selected position in said body and thereby to control the frequency of occurrence of said output pulse.
Claim 2
Dependent Claim
176 words
A frequency modulator which comprises: a body of selectively doped semiconductor substantially cut in a (110) plane with the longitudinal axis of said body corresponding within a selected number of degrees to a selected (110) axis of said material; means for producing a bias field substantially along said longitudinal axis; mans, responsive to a feedback signal, for producing a transverse domain in said body, said domain traveling along said longitudinal axis in response to said bias field; means for producing an output pulse upon the arrival of said transverse domain at a selected position in said body; means, responsive to said output pulse, for producing said feedback signal, and for transmitting said feedback signal to said means for producing said transverse domain; and means for varying the magnitude of said bias field along said longitudinal axis as a function of the amplitude of an input signal, thereby to control the time of arrival of said transverse domain at said selected position in said body and thereby to control the frequency of occurrence of said output pulse.
Claim 3
Dependent Claim
26 words
Apparatus as in claim 1 including: means for filtering said output pulse thereby to produce a frequency-modulated output signal in response to an amplitude-modulated input signal.
Claim 4
Dependent Claim
24 words
Apparatus as in claim 1 in which said longitudinal axis corresponds within + or - 3* to the selected (110) axis of said material.
Claim 5
Dependent Claim
12 words
Apparatus as in claim 1 in which said semiconductor material is germanium.
Claim 6
Dependent Claim
26 words
Apparatus as in claim 4 in which said germanium contains a donor impurity in a concentration between 4 X 1014cm 3 and 1.5 X 1015cm 3.
Claim 7
Dependent Claim
11 words
Apparatus as in claim 5 in which said impurity is antimony.
Claim 8
Dependent Claim
24 words
Apparatus as in claim 1 in which said bias field has a strength between 4 and 10 kilovolts per centimeter along said longitudinal axis.
Claim 9
Dependent Claim
119 words
Apparatus which comprises: means for producing an electric bias field; a body of selectively doped semiconductor material with input and output contacts placed thereon and with said electric bias field aligned substantially along its longitudinal axis, said body containing at least one transverse domain which, under the influence of said bias field, travels along said longitudinal axis from said input contacts to said output contacts; means for producing a transverse domain in the portion of said body adjacent said input contacts in response to the arrival of a transverse domain at said output contacts; and means for controllably varying the strength of said electric bias field, thereby to vary the travel time of a transverse domain through said body.
Claim 10
Dependent Claim
119 words
Apparatus which comprises: means for producing an electric bias field; a body of selectively doped semiconductor material with input and output contacts placed thereon and with said electric bias field aligned substantially along its longitudinal axis, said body containing at least one transverse domain which, under the influence of said bias field, travels along said longitudinal axis from said input contacts to said output contacts; means for producing a transverse domain in the portion of said body adjacent said input contacts in response to the arrival of a transverse domain at said output contacts; and means for controllably varying the strength of said electric bias field, thereby to vary the travel time of a transverse domain through said body.
Claim 11
Dependent Claim
61 words
Apparatus as in claim 8 in which said body of selectively doped semiconductor material comprises: a germanium crystal, cut in a (110) plane with the longitudinal axis of said crystal corresponding within three degrees to a selected (110) axis of said material, said germanium containing a donor impurity in a concentration between 4 X 1014cm 3 and 1.5 X 1015cm 3.
Claim 12
Dependent Claim
28 words
Apparatus as in claim 9 in which said electric bias field has a strength between 4 and 10 kilovolts per centimeter along the longitudinal axis of said body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-22 | 1974-09-21 | 1975-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-22 | 1978-09-21 | 1979-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-22 | 1982-09-21 | 1983-03-23 | $7700.00 | Window Closed / Lapsed |