← Back to Patent Explorer
US3568125A Expired / Lapsed US ⏱️ 0.0 years remaining

Thermistor

Assignee: International Standard Electric Corp
•
Filing: 1968-10-14
•
Granted: 1971-03-02
•
Expires: 1988-10-14
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A thermistor is formed of a semiconductor body having a layer of glass on one surface, a metallic resistance layer on the glass and ohmic contacts on the metallic layer and on another surface.

Inventors

  • 👤 Claude Marie Villemant
  • 👤 Michel Gaultier

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-22 21:59
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/04; H01C7/041; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49085

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 72 words
A process for the manufacture of thermistors comprising providing a body of semiconductor material of a predetermined thickness and resistivity, polishing said body, depositing a layer of glass on one surface, heating the glass to fuse to said body, applying a metallic resistance layer on the glass, applying spaced metallic layers to said resistance layer and to another surface to form two sets of ohmic contacts, and securing wires to said contacts.
Claim 2
Dependent Claim 72 words
A process for the manufacture of thermistors comprising providing a body of semiconductor material of a predetermined thickness and resistivity, polishing said body, depositing a layer of glass on one surface, heating the glass to fuse to said body, applying a metallic resistance layer on the glass, applying spaced metallic layers to said resistance layer and to another surface to form two sets of ohmic contacts, and securing wires to said contacts.
Claim 3
Dependent Claim 12 words
The process of claim 1 wherein said body is made of silicon.
Claim 4
Dependent Claim 28 words
The process of claim 1 wherein said body is made of germanium and a layer of silicon oxide is deposited on said one surface before depositing said glass.
Claim 5
Dependent Claim 55 words
The process of claim 1 wherein said metallic resistance layer is formed of nickel-chromium, said spaced metallic layers on said resistance layer being formed of a first layer of nickel and a second layer of gold on said first layer, said spaced metallic layers on said other surface and said wires being formed of gold.
Claim 6
Dependent Claim 20 words
The process of claim 1 wherein said glass has a coefficient of expansion similar to that of the semiconductor material.
Claim 7
Dependent Claim 62 words
A thermistor comprising a body of semiconductor material having a predetermined thickness and resistivity, a layer of glass fused to one surface, a metallic resistance layer on said glass, a pair of spaced metallic layer ohmic contacts on said resistance layer, a second pair of spaced metallic layer ohmic contacts on another surface, and pairs of wires respectively secured to said contacts.
Claim 8
Dependent Claim 62 words
A thermistor comprising a body of semiconductor material having a predetermined thickness and resistivity, a layer of glass fused to one surface, a metallic resistance layer on said glass, a pair of spaced metallic layer ohmic contacts on said resistance layer, a second pair of spaced metallic layer ohmic contacts on another surface, and pairs of wires respectively secured to said contacts.
Claim 9
Dependent Claim 11 words
The device of claim 6 wherein said body is of silicon.
Claim 10
Dependent Claim 30 words
The device of claim 6 wherein said body is of germanium and including a layer of silicon oxide on said one surface between said layer of glass and said body.
Claim 11
Dependent Claim 50 words
The device of claim 6 wherein said metallic resistance layer is of nickel-chromium, said ohmic contacts on said resistance layer including a first layer of nickel and a second layer of gold on said first layer, and said ohmic contacts on said other surface and said wires being of gold.
Claim 12
Dependent Claim 19 words
The device of claim 6 wherein said glass has a coefficient of expansion similar to that of the semiconductor.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-03-01 1974-08-31 1975-03-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-03-01 1978-08-31 1979-03-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-03-01 1982-08-31 1983-03-02 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag