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US3568097A Expired / Lapsed US ⏱️ 0.0 years remaining

Switched line length phase shift network for strip transmission line

Assignee: Texas Instruments Inc
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Filing: 1969-11-18
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Granted: 1971-03-02
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Expires: 1989-11-18
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Abstract

Abstract A diode switched line length phase shift network utilizing alternately directed diodes to reduce the number of DC biasing paths required to selectively switch the line length in various combinations into the circuit and the utilization of the low capacitance and high dynamic collector resistance of a transistor to apply a DC bias to the switching diodes of the phase shift circuit.

Inventors

  • 👤 Tom M Hyltin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 05:16
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/10; H01P1/15; H01P1/18; H01P1/185

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 241 words
A switched line length phase shift network for a microwave strip transmission line comprising at least first and second succeeding phase shift stages in series in microwave strip transmission line; said first and second phase shift stages each comprising a zero phase shift transmission line path, a predetermined phase shift transmission line path connected in parallel with said zero phase shift transmission line path, and a pair of opposed diodes connected in each of said transmission line paths, said diodes presenting a high impedance to the transmission of said microwave energy when in their nonconducting state; the paris of diodes of said first phase shift stage connected to said transmission line and being of the oppositE polarity relative to the polarity of the paris of diodes of the second succeeding stage. selectively energized DC bias means connected to each transmission line path between each said pair of opposed diodes for rendering said diodes selectively conductive to permit the transmission of microwave energy therethrough, the ground for said DC bias means to one of said stages being provided through a diode of the other of said stages; and isolating means for limiting loss of microwave energy from said transmission line through said DC bias means, said isolating means comprising transistors having collector, base and emitter electrodes with the collector connected to the respective transmission line path, the base connected to a reference voltage and the emitter connected to the DC bias means.
Claim 2
Dependent Claim 241 words
A switched line length phase shift network for a microwave strip transmission line comprising at least first and second succeeding phase shift stages in series in microwave strip transmission line; said first and second phase shift stages each comprising a zero phase shift transmission line path, a predetermined phase shift transmission line path connected in parallel with said zero phase shift transmission line path, and a pair of opposed diodes connected in each of said transmission line paths, said diodes presenting a high impedance to the transmission of said microwave energy when in their nonconducting state; the paris of diodes of said first phase shift stage connected to said transmission line and being of the oppositE polarity relative to the polarity of the paris of diodes of the second succeeding stage. selectively energized DC bias means connected to each transmission line path between each said pair of opposed diodes for rendering said diodes selectively conductive to permit the transmission of microwave energy therethrough, the ground for said DC bias means to one of said stages being provided through a diode of the other of said stages; and isolating means for limiting loss of microwave energy from said transmission line through said DC bias means, said isolating means comprising transistors having collector, base and emitter electrodes with the collector connected to the respective transmission line path, the base connected to a reference voltage and the emitter connected to the DC bias means.
Claim 3
Dependent Claim 33 words
The switched line length phase shift network defined in claim 1 wherein the transmission lines comprise strip transmission lines and the body of the transistor is connected directly to the strip transmission line.
Claim 4
Dependent Claim 19 words
The circuit defined in claim 2 wherein the strip transmission line and transistor are part of a hybrid circuit.
Claim 5
Dependent Claim 26 words
The circuit defined in claim 2 wherein the strip transmission line is formed on a high resistivity substrate and the transistor is formed in the substrate.

References Cited (Backward Citations)

US3027524A Cited
US3244867A Cited
US3295138A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-03-01 1974-08-31 1975-03-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-03-01 1978-08-31 1979-03-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-03-01 1982-08-31 1983-03-02 $7700.00 Window Closed / Lapsed

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