Packaged high frequency transistor with directly fused contacts
Abstract
Abstract A transistor suitable for use in the U.H.F. band and capable of providing power amplification. The transistor incorporates terminations that are directly fused, e.g. in soldering or brazing to respective emitter, base and collector contact surfaces having relatively large areas. In one embodiment the base region is a circular annulus in which are diffused emitter regions spaced around the annulus. The emitter contact is an annulus having radially inward projecting fingers overlying the emitter regions and the base contact is a disc having radially outward projecting fingers interdigitating with the emitter contact fingers. The base and collector terminals have coaxial stems projecting from discs fused to the base and collector contacts and the emitter terminal is an annulus fused to the emitter contact. This provides a package suitable for incorporation into a coaxial line system. Other embodiments incorporate rectangular, platelike terminations and provide packages suitable for direct incorporation into strip line and rectangular waveguide systems.
Inventors
- 👤 John Siddall Walker
- 👤 Michael Rupert Platten Young
- 👤 Gordon Howard Littlejohn
- 👤 Ian Hambry Morgan
Bibliographic Details
Claims Analysis
Total Claims: 6References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-22 | 1974-08-24 | 1975-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-22 | 1978-08-24 | 1979-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-22 | 1982-08-24 | 1983-02-23 | $7700.00 | Window Closed / Lapsed |