Functional light-controlled gunn oscillator
Abstract
Abstract A SHAPED MASK OVERLIES A SELECTED SURFACE OF A LAYER OF LIGHT-SENSITIVE SEMICONDUCTOR MATERIAL CAPABLE OF EXHIBITING NEGATIVE MOBILITY. THE LAYER IS FORMED SO THAT THE PRODUCT OF ELECTRON CONCENTRATION THEREIN TIMES THE LENGTH OF PATH BETWEEN SPACED ELECTRODES THEREON IS LESS THAN A VALUE NECESSARY FOR THE PROPORTION OF HIGH-FIELD DOMAINS. WHEN AN ELECTRIC FIELD IS CREATED WITHIN THE LAYER AND LIGHT IS APPLIED TO THE UNCOVERED PORTION OF THE SURFACE, HIGH-FIELD DOMAINS ARE PROPAGATED, AND HIGH-FREQUENCY OUTPUT SIGNALS ARE GENERATED WHOSE INSTANTANEOUS AMPLITUDE DURING THE TIME THE DOMAINS ARE PROPAGATED IS CONTROLLED BY THE GEOMETRY OF THE UNCOVERED SURFACE. IN THIS MANNER, THE GEOMETRY OF THE UNCOVERED SURFACE SUBSTANTIALLY CONTROLS THE SHAPE AND FREQUENCY OF THE WAVEFORM OF THE OUTPUT SIGNAL.
Inventors
- 👤 Raymond Solomon
- 👤 William H Haydl
Bibliographic Details
Claims Analysis
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