US3562418A
Expired / Lapsed
US
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Solid state image converter system
Assignee: General Electric Co
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Filing: 1966-12-05
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Granted: 1971-02-09
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Expires: 1986-12-05
Abstract
Abstract An image converter system of solid state construction which includes an image sensor matrix of nonlinear photosensitive means having charge storage properties which are varied as a function of applied light energy, the photosensitive means being sequentially interrogated through a direct low impedance path electrical connection made to the matrix for detecting said charge storage properties and generating a corresponding video output signal. Said photosensitive means each includes a photoconductor element in shunt with a storage capacitor, the pair being connected in series with a diode element. A backward bias voltage is applied across said diode elements for placing them in a normally back-biased condition, a forward bias voltage being sequentially applied to said diode elements during interrogation of the photosensitive means.
Inventors
- 👤 Robert E Glusick
- 👤 Daniel C Osborn
- 👤 Richard D Stewart
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:02
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/70; H04N25/76
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
117 words
An image converter system comprising: a. an array of nonlinear photosensitive means having charge storage properties, each means including at least; 1. a photosensitive element exhibiting an impedance that is a function of applied light energy so as to correspondingly vary the charge storage properties of said element, and 2. a nonlinear semiconductor element serially connected to said photosensitive element, said nonlinear element being normally biased into a nonconducting state; and b. interrogation means for sequentially interrogating said photosensitive elements so as to generate an electrical output signal that is a function of the elements'' charge storage properties, said interrogation means sequentially biasing into a conducting state the nonlinear elements serially connected to said interrogated photosensitive elements.
Claim 2
Dependent Claim
117 words
An image converter system comprising: a. an array of nonlinear photosensitive means having charge storage properties, each means including at least; 1. a photosensitive element exhibiting an impedance that is a function of applied light energy so as to correspondingly vary the charge storage properties of said element, and 2. a nonlinear semiconductor element serially connected to said photosensitive element, said nonlinear element being normally biased into a nonconducting state; and b. interrogation means for sequentially interrogating said photosensitive elements so as to generate an electrical output signal that is a function of the elements'' charge storage properties, said interrogation means sequentially biasing into a conducting state the nonlinear elements serially connected to said interrogated photosensitive elements.
Claim 3
Dependent Claim
71 words
An image converter system as in claim 14 wherein stored charge within said photosensitive means varies from a relatively fixed level to a second level that is a function of the applied light energy during relatively long noninterrogation periods, and wherein said interrogation means includes a low impedance path for providing interrogation of said photosensitive means by abruptly restoring the charge to said relatively fixed level during extremely short interrogation periods.
Claim 4
Dependent Claim
67 words
a nonlinear semiconductor element serially connected to said photosensitive element, said nonlinear element being normally biased into a nonconducting state; and b. interrogation means for sequentially interrogating said photosensitive elements so as to generate an electrical output signal that is a function of the elements'' charge storage properties, said interrogation means sequentially biasing into a conducting state the nonlinear elements serially connected to said interrogated photosensitive elements.
Claim 5
Dependent Claim
67 words
a nonlinear semiconductor element serially connected to said photosensitive element, said nonlinear element being normally biased into a nonconducting state; and b. interrogation means for sequentially interrogating said photosensitive elements so as to generate an electrical output signal that is a function of the elements'' charge storage properties, said interrogation means sequentially biasing into a conducting state the nonlinear elements serially connected to said interrogated photosensitive elements.
Claim 6
Dependent Claim
59 words
An image converter system as in claim 2 wherein stored charge within said photosensitive means is dissipated as a function of said applied light energy during noninterrogation periods, and which includes a first voltage source coupled to said low impedance path for providing storage of an amount of charge substantially equal to the charge dissipated during said interrogation periods.
Claim 7
Dependent Claim
27 words
An image converter system as in claim 3 which includes detecting means for detecting the amount of charge stored within each photosensitive means during said interrogation periods.
Claim 8
Dependent Claim
77 words
An image converter system as in claim 4 wherein said array is a two dimensional matrix including a first plurality of row conductors and a second plurality of column conductors intersecting said row conductors, said photosensitive means individually connected between said row and column conductors at the intersections thereof, and wherein said low impedance path is sequentially completed through said photosensitive means by semiconductor switches connected to one end of each of said row and column conductors.
Claim 9
Dependent Claim
45 words
An image converter system as in claim 5 wherein said semiconductor switches are sequentially operated so as to scan said photosensitive means along rows thereof, the semiconductor switches connected to said column conductors being constructed for extremely fast closing operation and relatively slow opening operation.
Claim 10
Dependent Claim
74 words
An image converter system as in claim 6 wherein a second voltage source is connected to the other end of each of said row conductors and a third voltage source is connected to the other end of said column conductors, saId first, second and third voltage sources applying a backward bias voltage to said nonlinear semiconductor elements during noninterrogation periods and applying a forward bias voltage to said nonlinear semiconductor elements during interrogation periods.
Claim 11
Dependent Claim
62 words
An image converter system as in claim 7 wherein said detecting means includes a semiconductor device coupled to said low impedance path and in a current steering relationship with the semiconductor switches connected to one group of said conductors so that current flowing through said semiconductor device is reciprocally related to the charge stored by said photosensitive means during said interrogation periods.
Claim 12
Dependent Claim
30 words
An image converter system as in claim 8 wherein said photosensitive elements each include the shunt connection of a photoconductor and a capacitor and said nonlinear element is a diode.
Claim 13
Dependent Claim
98 words
An image converter system as in claim 9 wherein the matrix of photosensitive elements is fabricated to form a wafer which includes a layer of dielectric material having discrete conductive regions through the thickness thereof for making external contact, island electrodes overlaying said conductive regions, a further continuous dielectric layer overlaying said island electrodes having electrode strips deposited thereon so as to form a plurality of capacitor elements with common connections provided by said electrode strips, crevices formed within said further dielectric layer along said electrode strips filled with photoconductive material which contacts said strip and island electrodes.
Claim 14
Dependent Claim
96 words
An image sensor matrix structure comprising: a. a wafer of photosensitive elements which includes; b. a layer of dielectric material having discrete conductive regions through the thickness thereof for making external contact; c. island electrodes overlaying said conductive regions; d. a further continuous dielectric layer overlaying said island electrodes having electrode strips deposited thereon so as to form a plurality of capacitor elements with common connections provided by said electrode strips; and e. crevices formed within said further dielectric layer along said electrode strips filled with a photoconductive material which contacts said strip and island electrodes.
Claim 15
Dependent Claim
96 words
An image sensor matrix structure comprising: a. a wafer of photosensitive elements which includes; b. a layer of dielectric material having discrete conductive regions through the thickness thereof for making external contact; c. island electrodes overlaying said conductive regions; d. a further continuous dielectric layer overlaying said island electrodes having electrode strips deposited thereon so as to form a plurality of capacitor elements with common connections provided by said electrode strips; and e. crevices formed within said further dielectric layer along said electrode strips filled with a photoconductive material which contacts said strip and island electrodes.
Claim 16
Dependent Claim
36 words
An image sensor matrix structure as in claim 11 wherein said conductive regions make integral contact with an array of semiconductor diode elements which are arranged in columns orthogonally disposed with respect to said electrode strips.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-08 | 1974-08-10 | 1975-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-08 | 1978-08-10 | 1979-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-08 | 1982-08-10 | 1983-02-09 | $7700.00 | Window Closed / Lapsed |