US3560279A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of doping semiconductor material
Assignee: NCR Voyix Corp
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Filing: 1968-11-05
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Granted: 1971-02-02
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Expires: 1988-11-05
Abstract
Abstract THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A P-N JUNCTION IN A SEMICONDUCTOR MATERIAL WHEREIN THE REGION ON ONE SIDE OF SAID P-N JUNCTION HAS A DESIRED LOW DOPANT CONCENTRATION AND WHEREIN SAID REGION IS FORMED BY DOPING SAID SEMICONDUCTOR MATERIAL FROM A SILICON DIOXIDE LAYER MADE FROM A COLLOIDAL SILICON DIOXIDELIQUID-DISPERSION CONTAINING BORON IMPURITY ATOMS AND COUNTERDOPANT ATOMS.
Inventors
- 👤 Janos Havas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:37
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-01 | 1974-08-03 | 1975-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-01 | 1978-08-03 | 1979-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-01 | 1982-08-03 | 1983-02-02 | $7700.00 | Window Closed / Lapsed |