US3559006A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with an inclined inwardly extending groove
Assignee: Toshiba Corp
•
Filing: 1968-11-14
•
Granted: 1971-01-26
•
Expires: 1988-11-14
Abstract
Abstract A SEMICONDUCTOR DEVICE HAVING A HIGH RESISTIVITY LAYER AND A LOW RESISTIVITY LAYER FORMED ON ONE SIDE OF SAID HIGH RESISTIVITY LAYER, WITH A PN JUNCTION DEFINED THEREBETWEEN, WHEREIN THERE IS FORMED A SURROUNDING GROOVE EXTENDING FROM THE LOW RESISTIVITY LAYER TO THE HIGH RESISTIVITY LAYER IN A MANNER TO INCLINE INWARDLY TOWARD THE CENTRAL AXIS OF THE SEMICONDUCTOR APPARATUS, WITH THE BOTTOM OF SAID GROOVE DISPOSED IN THE HIGH RESISTIVITY LAYER.
Inventors
- 👤 Michio Otsuka
- 👤 Hisayoshi Muramatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:43
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D99/00; H10P; H10P95/00; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/134; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-25 | 1974-07-27 | 1975-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-25 | 1978-07-27 | 1979-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-25 | 1982-07-27 | 1983-01-26 | $7700.00 | Window Closed / Lapsed |