Metallization process
Abstract
Abstract A SEMICONDUCTIVE DEVICE AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE WHEREIN THE OHMIC CONTACT IS IN THE ORDER OF MICRONS IN WIDTH. A FIRST METAL IS FORMED IN THE OPENING IN THE PROTECTIVE COATING WHICH ACTS AS THE OHMIC CONTACT TO THE SEMICONDUCTOR DEVICE. A SECOND METAL MAY BE APPLIED ONLY OVER THE FIRST METAL BY ELECTROLESS OR ELECTROPLATING TECHNIQUES TO INCREASE THE CONDUCTIVITY OF THE OHMIC CONTACT. FINALLY, AN EXTERNAL LAND METAL LAYER IS DEPOSITED OVER A RELATIVELY LARGE AREA OF THE PROTECTIVE COATING IN THE AREA OF THE OHMIC CONTACT WITH FINGER-LIKE EXTENSIONS OF THE LAND METAL LAYER CONTACTING THE OHMIC CONTACT BY SHORT OVERLAID AREAS. THE EXTERNAL LAND IS THE ONLY METAL LAYER IN THE PROCESS FORMED WHICH REQUIRES A PHOTOGRAPHIC MASK. THE PROCESS, THEREFORE, IN NOT LIMITED BY PRESENT DAY PHOTOENGRAVING TECHNIQUES.
Inventors
- 👤 Paul P Castrucci
- 👤 David De Witt
- 👤 Walter E Mutter
- 👤 Vir A Dhaka
Bibliographic Details
Claims Analysis
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