US3556841A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming silicon dioxide films
Assignee: Panasonic Holdings Corp
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Filing: 1968-04-04
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Granted: 1971-01-19
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Expires: 1988-04-04
Abstract
Abstract SILICON DIOXIDE FILM IS FORMED ON THE SURFACE OF A SEMICONDUCTOR SUBSTRATE BY THE THERMAL DECOMPOSITION OF A MIXED GAS COMPRISING A VAPOR OF AN ORGANO-OXYSILANE, A VAPOR OF AN ALIPHATIC CARBOXYLIC ACID SUCH AS ACETIC ACID, AND AN INERT GAS. THE USE OF SAID MIXED GAS RESULTS IN SUCH ADVANTAGES THAT THE REACTION CAN PROCEED AT SUCH A LOW TEMPERATURE WITHIN THE RANGE OF 300 TO 600*C AND THE VARIATION IN CHARACTERISTIC OF SILICON DIOXIDE AT THE DEPOSITION STEP CAN BE REDUCED.
Inventors
- 👤 Hitoo Iwasa
- 👤 Masami Yokozawa
- 👤 Iwao Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-18 | 1974-07-20 | 1975-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-18 | 1978-07-20 | 1979-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-18 | 1982-07-20 | 1983-01-19 | $7700.00 | Window Closed / Lapsed |