US3490943A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming juxtaposed metal layers separated by a narrow gap on a substrate and objects manufactured by the use of such methods
Assignee: US Philips Corp
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Filing: 1965-04-16
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Granted: 1970-01-20
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Expires: 1985-04-16
Abstract
No abstract record available.
Inventors
- 👤 Reinier De Werdt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:09
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; C; C23; C23C; C23C14/00; C23C14/04; C23C14/042; C23F; C23F1/00; C23F1/02; H10P; H10P50/00; H10P50/69; H10P50/691; H10P95/00; H10W20/00; H10W20/40; H10W72/00; H10W72/90; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/5363; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/931; H10W72/932; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
139 words
THE METHOD OF PROVIDING A PAIR OF ELECTRODE CONNECTION SPACED APART TEN MICRONS OR LESS ON A SEMICONDUCTIVE WAFER COMPRISING THE STEPS OF DEPOSITING A FIRST METALLIC COATING ON SAID WAFER FOR FORMING A FIRST ELECTRODE CONNECTION TO THE WAFER, DEPOSITING AN INSULATING LAYER OVER AT LEAST A PORTION OF SAID LAYER, FORMING AN OPENING IN SAID INSULATING LAYER FOR EXPOSING A PORTION OF SAID METALLIC COATING, ETCHING THE EXPOSED PLORTION OF SAID COATING FOR EXPOSING THE SEMICONDUCTIVE WAFER AND FOR UNDERCUTTING A PORTION OF THE SURFACE OF THE INSULATING LAYER AROUND THE PERIMETER OF THE OPENING A DISTANCE OF TEN MICRONS OR LESS, DEPOSITING A SECOND METALLIC COATING EXTENDING OVER THE OPENING IN THE INSULATING LAYER FOR FORMING A SECOND ELECTRODED CONNECTION TO THE WAFER SPACED FROM THE FIRST ELECTRODE CONNECTION SUBSTANTIALLY BY THE AMOUNT OF SAID UNDERCUTTING.
Claim 2
Independent Claim
139 words
THE METHOD OF PROVIDING A PAIR OF ELECTRODE CONNECTION SPACED APART TEN MICRONS OR LESS ON A SEMICONDUCTIVE WAFER COMPRISING THE STEPS OF DEPOSITING A FIRST METALLIC COATING ON SAID WAFER FOR FORMING A FIRST ELECTRODE CONNECTION TO THE WAFER, DEPOSITING AN INSULATING LAYER OVER AT LEAST A PORTION OF SAID LAYER, FORMING AN OPENING IN SAID INSULATING LAYER FOR EXPOSING A PORTION OF SAID METALLIC COATING, ETCHING THE EXPOSED PLORTION OF SAID COATING FOR EXPOSING THE SEMICONDUCTIVE WAFER AND FOR UNDERCUTTING A PORTION OF THE SURFACE OF THE INSULATING LAYER AROUND THE PERIMETER OF THE OPENING A DISTANCE OF TEN MICRONS OR LESS, DEPOSITING A SECOND METALLIC COATING EXTENDING OVER THE OPENING IN THE INSULATING LAYER FOR FORMING A SECOND ELECTRODED CONNECTION TO THE WAFER SPACED FROM THE FIRST ELECTRODE CONNECTION SUBSTANTIALLY BY THE AMOUNT OF SAID UNDERCUTTING.
References Cited (Backward Citations)
US3244555A
Cited
US3303071A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-01-19 | 1973-07-21 | 1974-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-01-19 | 1977-07-21 | 1978-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-01-19 | 1981-07-21 | 1982-01-20 | $7700.00 | Window Closed / Lapsed |